SJEP120R063 SEMISOUTH, SJEP120R063 Datasheet - Page 5

• Manufacturer Part Number: SJEP120R063
• Description: JFET, SIC, N-OFF, 1200V, 30A, TO247
• Manufacturer: SEMISOUTH

Specifications of SJEP120R063

• Transistor Type: JFET
• Breakdown Voltage Vbr: 1200V
• Power Dissipation Pd: 250W
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: TO-247
• No. Of Pins: 3
• Rohs Compliant: Yes
• Continuous Drain Current Id: 30A

May 2009
E
s
700
600
500
400
300
200
100
= f(I
Figure 13. Switching Energy Losses
0
0
D
); V
Tj = 25
Tj = 150
DS
= 600V; GD = +15V/-10V, R
6
o
C
o
C
I
D
12
, Drain Current (A)
18
Figure 15. Inductive Load Switching Circuit
24
GEXT
30
= 2.5ohm
E
E
E
TS
ON
OFF
36
PRELIMINARY
Rev 1.3
E
s
Figure 14. Switching Energy Losses
= f(R
1000
900
800
700
600
500
400
300
200
100
0
GEXT
0
); V
Tj = 25
Tj = 150
Rg
DS
EXT
= 600V; I
o
, External Gate Resistance, ( )
C
o
3
C
SJEP120R063
D
Silicon Carbide
= 24A, GD = +15V/-10V
6
9
E
E
E
OFF
ON
TS
12
5/7