TDA1300T NXP Semiconductors, TDA1300T Datasheet - Page 8

• Manufacturer Part Number: TDA1300T
• Manufacturer: NXP Semiconductors

Specifications of TDA1300T

• Operating Temperature (min): -40C
• Operating Temperature Classification: Industrial
• Operating Temperature (max): 85C
• Package Type: SO
• Rad Hardened: No
• Lead Free Status / Rohs Status: Compliant

Philips Semiconductors
1997 Jul 15
Data amplifier; equalized single and double speed
V
R
V
SR
Z
t
t
G/G
B
Control pins LDON, LS and HG (with 47 k internal pull-up resistor)
V
V
I
Laser output
V
I
Monitor diode input
V
I
V
I
RS
d(eq)
d(f)
IL
o(L)
L
i(mon)
SYMBOL
o(RF)
I
T
O(RF)
O(RF)(max)
RF
IL
IH
o(L)
ref
i(mon)
RF
Photodetector amplifiers and laser
supplies
o(L)
RF
ref
/ t
DC output voltage
transresistance
maximum output voltage
RF slew rate
RF output impedance
equalization delay
flatness delay ( / )
data amplifier gain ratio
unequalized output bandwidth I
LOW level input voltage
HIGH level input voltage
LOW level input current
output voltage
output current
slew rate output current
virtual reference voltage
leakage current
monitor input voltage
monitor input current
reference temperature drift
reference supply rejection
PARAMETER
I
N-sub monitor mode
(low gain); note 3
N-sub monitor mode
(high gain); note 3
P-sub monitor mode
(low gain); note 4
P-sub monitor mode
(high gain); note 4
note 5
V
f
LS = 1; note 6
LS = 0; note 6
note 6
I
C
N-sub monitor mode
N-sub monitor mode
P-sub monitor mode
P-sub monitor mode
N-sub monitor mode
N-sub monitor mode
i(central)
i
i(d)
o(L)
SR
= 1 MHz
L
= 1 nF (see Fig.8)
= 1.67 A
= 100 mA
= 1 V (peak-to-peak)
CONDITIONS
= 0
8
56
96
112
200
4.5
3
V
130
0.2
0.2
DD
MIN.
TDA1300T; TDA1300TT
1
0.3
70
120
140
240
6
100
320
10
5
6
5
3.4
150
1
V
40
DD
TYP.
0.7
Preliminary specification
84
144
168
285
V
+0.5
V
100
V
170
2
1
100
DD
DD
DDL
MAX.
+ 0.2
1.2
0.7 V
V
k
k
k
k
V
V/ s
ns
ns
ns
dB
MHz
V
V
mA
mA/ s
mV
nA
V
mA
ppm
%
A
UNIT