TDA1300T NXP Semiconductors, TDA1300T Datasheet - Page 9

• Manufacturer Part Number: TDA1300T
• Manufacturer: NXP Semiconductors

Specifications of TDA1300T

• Operating Temperature (min): -40C
• Operating Temperature Classification: Industrial
• Operating Temperature (max): 85C
• Package Type: SO
• Rad Hardened: No
• Lead Free Status / Rohs Status: Compliant

Philips Semiconductors
Notes to the characteristics
1. The maximum input current is defined as the current in which the gain G
2. The gain increases if a larger supply voltage is used (see Fig.6).
3. Transresistance of 70 k and 120 k (typical) is only available in N-sub monitor mode (see Table 1).
4. Transresistance of 140 k and 240 k (typical) is only available in P-sub monitor mode (see Table 1).
5. Output voltage swing will be: V
6. For single speed the data amplifier gain ratio is defined as gain difference between 1 MHz and 100 kHz, while the
1997 Jul 15
Reference source V
V
RS
I
Z
M
ADJ
SYMBOL
T
i
ref
Photodetector amplifiers and laser
supplies
ref
supply voltage to V
flatness delay is defined up to 1 MHz (see Fig.7). For double speed the data amplifier gain ratio is defined as gain
difference between 2 MHz and 200 kHz, while the flatness delay is defined up to 2 MHz.
reference voltage
reference temperature drift
reference supply rejection
adjustment current
input impedance
multiplying factor (I
ADJ
PARAMETER
DD
and laser adjustment current I
= 5 V increases the maximum input current (see also Figs 4 and 5).
mon
O(RF)(swing)
/I
ADJ
)
= V
R
R
R
ADJ
ADJ
ADJ
O(RF)(max)
= 48 k
= 5.6 k
= 4.8 k
CONDITIONS
ADJ
9
V
O(RF)(p-p)
.
1.15
MIN.
d(n)
TDA1300T; TDA1300TT
reaches its minimum. Increasing the
1.24
40
1
10
TYP.
Preliminary specification
1.31
1
200
MAX.
mV
ppm
%
k
A
UNIT