AM29LV400BT-90EC Spansion Inc., AM29LV400BT-90EC Datasheet - Page 16

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AM29LV400BT-90EC

Manufacturer Part Number
AM29LV400BT-90EC
Description
Manufacturer
Spansion Inc.
Datasheet

Specifications of AM29LV400BT-90EC

Cell Type
NOR
Density
4Mb
Access Time (max)
90ns
Interface Type
Parallel
Boot Type
Top
Address Bus
19/18Bit
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
0C to 70C
Package Type
TSOP
Program/erase Volt (typ)
2.7 to 3.6V
Sync/async
Asynchronous
Operating Temperature Classification
Commercial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8/16Bit
Number Of Words
512K/256K
Supply Current
12mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AM29LV400BT-90EC
Manufacturer:
AMD
Quantity:
668
Part Number:
AM29LV400BT-90EC
Manufacturer:
AMD
Quantity:
4 950
Temporary Sector Unprotect
This feature allows temporary unprotection of previ-
ously protected sectors to change data in-system. The
Sector Unprotect mode is activated by setting the RE-
SET# pin to V
sectors can be programmed or erased by selecting the
sector addresses. Once V
SET# pin, all the previously protected sectors are
protected again. Figure 2 shows the algorithm, and
Figure 22 shows the timing diagrams, for this feature.
14
Figure 2. Temporary Sector Unprotect Operation
Notes:
1. All protected sectors unprotected.
2. All previously protected sectors are protected once
again.
ID
. During this mode, formerly protected
Unprotect Completed
Program Operations
Temporary Sector
Perform Erase or
RESET# = V
RESET# = V
(Note 1)
(Note 2)
START
ID
is removed from the RE-
ID
IH
D A T A
Am29LV400B
S H E E T
Hardware Data Protection
The command sequence requirement of unlock cycles
for programming or erasing provides data protection
against inadvertent writes (refer to Table 5 for com-
mand definitions). In addition, the following hardware
data protection measures prevent accidental erasure
or programming, which might otherwise be caused by
spurious system level signals during V
and power-down transitions, or from system noise.
Low V
When V
cept any write cycles. This protects data during V
power-up and power-down. The command register
and all internal program/erase circuits are disabled,
and the device resets. Subsequent writes are ignored
until V
vide the proper signals to the control pins to prevent
unintentional writes when V
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#, CE#
or WE# do not initiate a write cycle.
Logical Inhibit
Write cycles are inhibited by holding any one of OE# =
V
CE# and WE# must be a logical zero while OE# is a
logical one.
Power-Up Write Inhibit
If WE# = CE# = V
the device does not accept commands on the rising
edge of WE#. The internal state machine is automati-
cally reset to reading array data on power-up.
IL
, CE# = V
CC
CC
CC
is greater than V
Write Inhibit
is less than V
IH
or WE# = V
IL
and OE# = V
LKO
LKO
IH
CC
, the device does not ac-
. To initiate a write cycle,
21523D4 December 4, 2006
. The system must pro-
is greater than V
IH
during power up,
CC
power-up
LKO
.
CC

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