AM29LV400BT-90EC Spansion Inc., AM29LV400BT-90EC Datasheet - Page 3

• Manufacturer Part Number: AM29LV400BT-90EC
• Manufacturer: Spansion Inc.

Specifications of AM29LV400BT-90EC

• Cell Type: NOR
• Density: 4Mb
• Access Time (max): 90ns
• Interface Type: Parallel
• Boot Type: Top
• Address Bus: 19/18Bit
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: 0C to 70C
• Package Type: TSOP
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8/16Bit
• Number Of Words: 512K/256K
• Supply Current: 12mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Not Compliant

Am29LV400B
4 Megabit (512 K x 8-Bit/256 K x 16-Bit)
CMOS 3.0 Volt-only Boot Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
■ Single power supply operation
■ Manufactured on 0.32 µm process technology
■ High performance
■ Ultra low power consumption (typical values at
■ Flexible sector architecture
■ Unlock Bypass Program Command
■ Top or bottom boot block configurations
This Data Sheet states AMD’s current technical specifications regarding the Product described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
This product has been retired and is not available for designs. For new and current designs, S29AL004D supersedes Am29LV400B and is the factory-recommended migration path. Please
refer to the S29AL004D data sheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes only.
— Full voltage range: 2.7 to 3.6 volt read and write
— Regulated voltage range: 3.0 to 3.6 volt read and
— Compatible with 0.5 µm Am29LV400 device
— Full voltage range: access times as fast as 70 ns
— Regulated voltage range: access times as fast as
5 MHz)
— 200 nA Automatic Sleep mode current
— 200 nA standby mode current
— 7 mA read current
— 15 mA program/erase current
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
— One 8 Kword, two 4 Kword, one 16 Kword, and
— Supports full chip erase
— Sector Protection features:
— A hardware method of locking a sector to prevent
— Sectors can be locked in-system or via
— Reduces overall programming time when issuing
available
operations for battery-powered applications
write operations for compatibility with high
performance 3.3 volt microprocessors
55 ns
seven 64 Kbyte sectors (byte mode)
seven 32 Kword sectors (word mode)
any program or erase operations within that sector
programming equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
multiple program command sequences
DATA SHEET
■ Embedded Algorithms
■ Minimum 1,000,000 write cycle guarantee per sector
■ 20-year data retention at 125°C
■ Package option
■ Compatibility with JEDEC standards
■ Data# Polling and toggle bits
■ Ready/Busy# pin (RY/BY#)
■ Erase Suspend/Erase Resume
■ Hardware reset pin (RESET#)
— Embedded Erase algorithm automatically
— Embedded Program algorithm automatically
— Reliable operation for the life of the system
— 48-ball FBGA
— 48-pin TSOP
— 44-pin SO
— Lead (Pb) - Free Packaging Available
— Pinout and software compatible with
— Superior inadvertent write protection
— Provides a software method of detecting program
— Provides a hardware method of detecting
— Suspends an erase operation to read data from,
— Hardware method to reset the device to reading
preprograms and erases the entire chip or any
combination of designated sectors
writes and verifies data at specified addresses
single-power supply Flash
or erase operation completion
program or erase cycle completion
or program data to, a sector that is not being
erased, then resumes the erase operation
array data
Publication# 21523
Issue Date: December 4, 2006
Rev: D Amendment/4