TC58FVM5T2ATG65 Toshiba, TC58FVM5T2ATG65 Datasheet - Page 22

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TC58FVM5T2ATG65

Manufacturer Part Number
TC58FVM5T2ATG65
Description
Manufacturer
Toshiba
Datasheet

Specifications of TC58FVM5T2ATG65

Cell Type
NOR
Density
32Mb
Access Time (max)
65ns
Interface Type
Parallel
Boot Type
Top
Address Bus
22/21Bit
Operating Supply Voltage (typ)
2.5/3/3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP-I
Program/erase Volt (typ)
8.5 to 9.5V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.3V
Operating Supply Voltage (max)
3.6V
Word Size
8/16Bit
Number Of Words
4M/2M
Supply Current
55mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / Rohs Status
Compliant

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DC CHARACTERISTICS
AC TEST CONDITIONS
I
I
V
V
I
I
I
I
I
I
I
I
I
I
I
I
V
(1) The device enters Automatic Sleep Mode in which the address remains fixed for during 150 ns.
(2) (I
Input Pulse Level
Input Pulse Rise and Fall Time (10%~90%)
Timing Measurement Reference Level (input)
Timing Measurement Reference Level (output)
Output Load
LI
LO
DDO1
DDO2
DDO3
DDO4
DDO5
DDO6
DDO7
DDO8
DDS1
DDS2
ID
ACC
OH
OL
LKO
SYMBOL
DDO1
+ I
DDO7
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
V
Current
V
V
V
Read-While-Program Current
V
Read-while-Erase Current
V
Erase-Suspend Current
V
Current
V
Increment Read Current
V
V
(Automatic Sleep Mode
High-Voltage Input Current for
A9, OE and RESET
High-Voltage Input Current for
Low-V
WP
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
/ACC
Average Random Read
Average Program Current
Average Erase Current
Average
Average
Average Program-while-
Average Page Read
Average Address
Standby Current
Standby Current
× 7)/8words
DD
PARAMETER
Lock-out Voltage
PARAMETER
(1)
(2)
)
0 V ≤ V
0 V ≤ V
I
I
I
V
t
V
V
V
t
V
t
V
V
V
t
t
or RESET = V
V
V
11.4 V ≤ V
8.5 V ≤ V
CE = RESET = V
OH
OH
OL
CYCLE
CYCLE
CYCLE
RC
PRC
IN
IN
IN
IN
IN
IN
IN
IN
IH
IL
= V
= 4.0 mA
= V
= V
= V
= V
= V
= V
= V
= V
= 100 ns (MIN)
= V
= − 0.1 mA
= − 2.5 mA
= 25 ns (MIN)
SS
IN
OUT
IH
IH
IH
IH
IH
IH
IH
IH
DD
= t
= t
= t
CONDITION
ACC
/V
/V
/V
/V
/V
/V
/V
/V
≤ V
RC
RC
RC
ID
IL
IL
IL
IL
IL
IL
IL
IL
≤ V
≤ 12.6 V
, I
, I
, I
, I
, I
, I
, I
, I
DD
= 100 ns (MIN)
= 100 ns (MIN)
= 100 ns (MIN)
≤ 9.5 V
OUT
OUT
OUT
OUT
OUT
OUT
OUT
OUT
DD
SS
= 0 mA
= 0 mA
= 0 mA
= 0 mA
= 0 mA
= 0 mA
= 0 mA
= 0 mA
DD
C
TC58FVM5(T/B)(2/3)A(FT/XB)65
L
(100 pF) + 1 TTL Gate/C
0.85 × V
V
DD
MIN
1.5
− 0.4
DD
VDD/2, VDD/2
VDD/2, VDD/2
CONDITION
V
DD
5 ns
, 0.0 V
TYP.
35
43
43
8
8
8
1
5
2
2
L
(30 pF) + 1 TTL Gate
2003-06-30 22/64
MAX
0.4
2.0
± 1
± 1
55
15
15
70
70
15
11
10
10
35
20
5
UNIT
mA
mA
µ A
µ A
V
V

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