TC58FVM5T2ATG65 Toshiba, TC58FVM5T2ATG65 Datasheet - Page 7

• Manufacturer Part Number: TC58FVM5T2ATG65
• Manufacturer: Toshiba

Specifications of TC58FVM5T2ATG65

• Cell Type: NOR
• Density: 32Mb
• Access Time (max): 65ns
• Interface Type: Parallel
• Boot Type: Top
• Address Bus: 22/21Bit
• Operating Supply Voltage (typ): 2.5/3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP-I
• Program/erase Volt (typ): 8.5 to 9.5V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.3V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8/16Bit
• Number Of Words: 4M/2M
• Supply Current: 55mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Compliant

SIMULTANEOUS READ/WRITE OPERATION
operation enables the device to simultaneously write data to or erase data from a bank while reading data from
another bank.
switched between using the bank addresses (A20~A18). For a description of bank blocks and addresses, please refer
to the Block Address Table and Block Size Table.
below shows the operation modes in which simultaneous operation can be performed.
Note that during Auto-Program execution or Auto Block Erase operation, the Simultaneous Read/Write operation
cannot read data from addresses in the same bank which have not been selected for operation. Data from these
addresses can be read using the Program Suspend or Erase Suspend function, however.
OPERATION MODES
including block protection and data polling. When incorporating the device into a deign, please refer to the timing
charts and flowcharts in combination with the description below.
The TC58FVM5T2A/B2A/T3A/B3A features a Simultaneous Read/Write operation. The Simultaneous Read/Write
The TC58FVM5T2A/B2A/T3A/B3A has a total of four banks (4Mbits: 12Mbits: 12Mbits: 4Mbits ). Banks can be
The Simultaneous Read/Write operation cannot perform multiple operations within a single bank. The table
In addition to the Read, Write and Erase Modes, the TC58FVM5T2A/B2A/T3A/B3A features many functions
SIMULTANEOUS READ/WRITE OPERATION
Read Mode
ID Read Mode
Auto-Program Mode
Auto-Page Program Mode
Fast Program Mode
Program Suspend Mode
Auto Block Erase Mode
Auto Multiple Block Erase Mode
Erase Suspend Mode
Program during Erase Suspend
Program Suspend during Erase Suspend
CFI Mode
(1) Only Command Mode is valid.
(2) Including times when Acceleration Mode is in use.
(3) If the selected blocks are spread across all four banks, simultaneous operation cannot be carried out.
READ MODE (PAGE READ)
perform high-speed random access and Page Read as an asynchronous ROM. The page size of the device is 8
word or 16 byte, with the appropriate page address being selected by address of A0-A2 (and A-1 in byte mode).
operation. A software reset releases ID Read Mode and the lock state which the device enters if an automatic
operation ends abnormally, and sets the device to Read Mode. A hardware reset terminates operation of the
device and resets it to Read Mode. When reading data without changing the address immediately after
power-on, either input a hardware Reset or change CE from H to L.
To read data from the memory cell array, set the device to Read Mode. In the Read Mode, the device can
The device is automatically set to Read Mode immediately after power-on or on completion of automatic
STATUS OF BANK ON WHICH OPERATION IS BEING
(1)
(2)
PERFORMED
(3)
TC58FVM5(T/B)(2/3)A(FT/XB)65
STATUS OF OTHER BANKS
Read Mode
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