LH28F008BJT-BTLZ1 Sharp Electronics, LH28F008BJT-BTLZ1 Datasheet - Page 33

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LH28F008BJT-BTLZ1

Manufacturer Part Number
LH28F008BJT-BTLZ1
Description
Manufacturer
Sharp Electronics
Datasheet

Specifications of LH28F008BJT-BTLZ1

Cell Type
NOR
Density
8Mb
Access Time (max)
100ns
Interface Type
Parallel
Boot Type
Bottom
Address Bus
20b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
0C to 70C
Package Type
TSOP
Sync/async
Asynchronous
Operating Temperature Classification
Commercial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
1M
Supply Current
30mA
Mounting
Surface Mount
Pin Count
40
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
LH28F008BJT-BTLZ1
Manufacturer:
SHARP
Quantity:
3 500
Part Number:
LH28F008BJT-BTLZ1
Manufacturer:
SHARP
Quantity:
20 000
NOTES:
1. All currents are in RMS unless otherwise noted. Typical values at nominal V
2. I
3. Block erases, full chip erase, byte writes and lock-bit configurations are inhibited when V
4. The Automatic Power Savings (APS) feature is placed automatically power save mode that addresses not switching more
5. Sampled, not 100% tested.
6. Applying 12V±0.3V to V
7. About all of pin except describe Test Conditions, CMOS level inputs are either V
V
V
V
V
V
V
V
V
V
sharp
IL
IH
OL
OH1
OH2
CCWLK
CCWH1
CCWH2
LKO
Sym.
device’s current draw is the sum of I
guaranteed in the range between V
above V
than 300ns while read mode.
may be connected to 12V±0.3V for a total of 80 hours maximum.
inputs are either V
CCWS
and I
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
(TTL)
Output High Voltage
(CMOS)
V
Operations
V
Erase, Byte Write or Lock-Bit
Configuration Operations
V
Erase, Byte Write or Lock-Bit
Configuration Operations
V
CCWH2
CCW
CCW
CCW
CC
CCES
Lockout Voltage
Lockout during Normal
during Block Erase, Full Chip
during Block Erase, Full Chip
(max.).
are specified with the device de-selected. If read or byte written while in erase suspend mode, the
IL
or V
Parameter
IH
CCW
.
during erase/write can only be done for a maximum of 1000 cycles on each block. V
CCWLK
CCWS
(max.) and V
or I
DC Characteristics (Continued)
CCES
Notes
3,5
and I
5
5
5
5
5
6
LHF08JZ1
CCWH1
CCR
Min.
or I
0.85
V
V
11.7
V
-0.5
-0.4
(min.), between V
2.0
2.4
2.7
2.0
CC
CC
CC
CCW
=2.7V-3.6V
, respectively.
Max.
+0.5
V
12.3
0.8
0.4
1.0
3.6
CC
CC
voltage and T
CCWH1
CC
±0.2V or GND±0.2V, TTL level
Unit
V
V
V
V
V
V
V
V
V
V
(max.) and V
CCW
V
I
V
I
V
I
V
I
A
≤V
OL
OH
OH
OH
CC
CC
CC
CC
=+25°C.
=2.0mA
=-1.5mA
=-2.0mA
=-100µA
CCWLK
=V
=V
=V
=V
Test Conditions
CCWH2
CC
CC
CC
CC
Min.
Min.
Min.
Min.
, and not
(min.) and
Rev. 1.27
CCW
30

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