LH28F008BJT-BTLZ1 Sharp Electronics, LH28F008BJT-BTLZ1 Datasheet - Page 38

• Manufacturer Part Number: LH28F008BJT-BTLZ1
• Manufacturer: Sharp Electronics

Specifications of LH28F008BJT-BTLZ1

• Cell Type: NOR
• Density: 8Mb
• Access Time (max): 100ns
• Interface Type: Parallel
• Boot Type: Bottom
• Address Bus: 20b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: 0C to 70C
• Package Type: TSOP
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 1M
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 40
• Lead Free Status / Rohs Status: Not Compliant

6.2.6 Alternative CE#-Controlled Writes
NOTES:
1. In systems where CE# defines the write pulse width (within a longer WE# timing waveform), all setup, hold, and inactive
2. Sampled, not 100% tested.
3. Refer to Table 3 for valid A
4. V
.
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
sharp
AVAV
PHEL
WLEL
ELEH
SHEH
VPEH
AVEH
DVEH
EHDX
EHAX
EHWH
EHEL
EHR0
EHGL
QVVL
QVSL
Sym.
WE# times should be measured relative to the CE# waveform.
success (SR.1/3/4/5=0).
CCW
should be held at V
Write Cycle Time
RP# High Recovery to CE# Going Low
WE# Setup to CE# Going Low
CE# Pulse Width
WP#V
V
Address Setup to CE# Going High
Data Setup to CE# Going High
Data Hold from CE# High
Address Hold from CE# High
WE# Hold from CE# High
CE# Pulse Width High
CE# High to SR.7 Going "0"
Write Recovery before Read
V
WP# V
CCW
CCW
IH
Hold from Valid SRD
Setup to CE# Going High
IH
Setup to CE# Going High
Hold from Valid SRD
CCWH1/2
IN
and D
Parameter
until determination of block erase, full chip erase, byte write or lock-bit configuration
IN
for block erase, full chip erase, byte write or lock-bit configuration.
V
CC
=2.7V-3.6V, T
(1)
LHF08JZ1
A
=0°C to +70°C
Notes
2,4
2,4
2
2
2
3
3
Min.
100
100
100
50
50
50
20
1
0
0
0
0
0
0
0
Max.
100
Rev. 1.27
Unit
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
35