LH28F160BVHE-BTL90 Sharp Electronics, LH28F160BVHE-BTL90 Datasheet - Page 4

• Manufacturer Part Number: LH28F160BVHE-BTL90
• Manufacturer: Sharp Electronics

Specifications of LH28F160BVHE-BTL90

• Cell Type: NOR
• Density: 16Mb
• Access Time (max): 90ns
• Interface Type: Parallel
• Boot Type: Bottom
• Address Bus: 21/20Bit
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8/16Bit
• Number Of Words: 2M/1M
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Not Compliant

Its Boot, Parameter and Main-blocked
directly executed out of flash or downloaded to DRAM, the LH28F160BVHE-BTL90
protection with V,, at GND, selective hardware boot block locking. These alternatives give designers ultimate control of their
The LH28F160BVHEBTL90
n Single Voltage Operation
H High-Block Erase and Word/Byte Write
w User-Configurable
w High-Performance Access Time
n Optimized Array Blocking Architecture
w Extended Cycling Capability
w Low Power Management
SHARP’s LH28F160BVHE-BTL90
wide range of applications. LH28F160BVHE-BTL90
operation capability realize battery life and suits for cellular phone application.
component suitable for portable terminals and personal computers. Its enhanced suspend capabilities provide for an ideal
solution for code + data storage applications. For secure code storage applications, such as networking, where code is either
code security needs.
standard package: the 48-lead TSOP ideal for board constrained applications.
*ETOX is a trademark of Intel Corporation.
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Performance
2.7V-3.6V VCC and Vpp Read/Write/Erase
Operation
Usable 12V+O.6V Vpp
90ns(V,,=2,7V-3.6V,
Two 4K-word Boot Blocks
Six 4K-word Parameter Blocks
Thirty-one 32K-word Main Blocks
Bottom Boot Location
Deep Power-Down Mode
Automatic Power Savings Mode Decreases
ICC in Static Mode
100,000 Block Erase Cycles
x8 or x 16 Operation
is manufactured on SHARP’s 0.35nm ETOXTM* process technology. It come in industry-
16M-BIT (2Mbit x 8 / 1Mbit x 16)
T,=-40°C
Boot Block FLASH MEMORY
Flash memory is a high-density, low-cost, nonvolatile, read/write storage solution for a
LH28F 160BVHE-BTL90
architecture, flexible voltage and extended cycling provide for highly flexible
to +85”C)
can operate at V,,- -2 7V-3.6V and V,,=2.7V-3.6V.
LHF16Vll
n Enhanced Data Protection Features
n Enhanced Automated Suspend Options
n Automated Word/Byte Write and Block Erase
w SRAM-Compatible Write Interface
n Industry-Standard Packaging
n ETOXm*
w CMOS Process (P-type silicon substrate)
n Not designed or rated as radiation hardened
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Absolute Protection with Vpp=GND
Block Erase and Word/Byte Write Lockout
during Power Transitions
Boot Blocks Protection with WP#=VIL
Word/Byte Write Suspend to Read
Block Erase Suspend to Word/Byte Write
Block Erase Suspend to Read
Command User Interface
4%Lead TSOP
Status Register
Nonvolatile Flash Technology
offers two levels of protection: absolute
Its low voltage
Rev. 1.1
2