MT48LC2M32B2TG-6 Micron Technology Inc, MT48LC2M32B2TG-6 Datasheet - Page 37
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MT48LC2M32B2TG-6
Manufacturer Part Number
MT48LC2M32B2TG-6
Description
Manufacturer
Micron Technology Inc
Type
SDRAMr
Datasheet
1.MT48LC2M32B2TG-6.pdf
(69 pages)
Specifications of MT48LC2M32B2TG-6
Organization
2Mx32
Density
64Mb
Address Bus
13b
Access Time (max)
17/7.5/5.5ns
Maximum Clock Rate
166MHz
Operating Supply Voltage (typ)
3.3V
Package Type
TSOP-II
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
180mA
Pin Count
86
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Not Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT48LC2M32B2TG-6
Manufacturer:
MICRON
Quantity:
10
Company:
Part Number:
MT48LC2M32B2TG-6
Manufacturer:
MICRON
Quantity:
5
Part Number:
MT48LC2M32B2TG-6
Manufacturer:
MICRONAS
Quantity:
20 000
Part Number:
MT48LC2M32B2TG-6:G
Manufacturer:
MT
Quantity:
20 000
Part Number:
MT48LC2M32B2TG-6D
Manufacturer:
MICRON/美光
Quantity:
20 000
Company:
Part Number:
MT48LC2M32B2TG-6G
Manufacturer:
LT
Quantity:
4 330
Part Number:
MT48LC2M32B2TG-6G
Manufacturer:
MICRON/美光
Quantity:
20 000
Part Number:
MT48LC2M32B2TG-6IT
Manufacturer:
MICRON/美光
Quantity:
20 000
Figure 28:
Figure 29:
PDF: 09005aef811ce1fe/Source: 09005aef811ce1d5
64MSDRAMx32_2.fm - Rev. J 12/08 EN
Internal
States
Internal
States
READ with Auto Precharge Interrupted by a WRITE
WRITE with Auto Precharge Interrupted by a READ
Notes:
COMMAND
COMMAND
ADDRESS
Note:
ADDRESS
BANK m
BANK m
BANK n
BANK n
DQM
CLK
CLK
DQ
1. DQM is HIGH at T2 to prevent D
DQ
1
Active
Page
DQM is LOW.
READ - AP
BANK n,
Page Active
BANK n
COL a
T0
NOP
T0
READ with Burst of 4
WRITE - AP
BANK n,
Page Active
BANK n
Page Active
COL a
T1
D
T1
NOP
CL = 3 (BANK n)
a
IN
WRITE with Burst of 4
a + 1
T2
T2
D
NOP
NOP
IN
37
BANK m,
READ - AP
T3
COL d
T3
BANK m
OUT
D
NOP
OUT
a
Interrupt Burst, Write-Back
t
WR - BANK n
READ with Burst of 4
a + 1 from contending with D
Micron Technology, Inc., reserves the right to change products or specifications without notice.
BANK m,
WRITE - AP
COL d
T4
BANK m
CL = 3 (BANK m)
T4
NOP
D
d
IN
Interrupt Burst, Precharge
WRITE with Burst of 4
T5
T5
d + 1
NOP
NOP
D
Precharge
IN
t
RP - BANK n
t
RP - BANK n
T6
T6
d + 2
D
NOP
NOP
D
OUT
d
IN
©2001 Micron Technology, Inc. All rights reserved.
64Mb: x32 SDRAM
IN
DON’T CARE
DON’T CARE
d at T4.
T7
T7
t WR - BANK m
D
d + 1
d + 3
NOP
NOP
D
t RP - BANK m
OUT
IN
Write-Back
Idle
Commands