BSP250 NXP Semiconductors, BSP250 Datasheet - Page 10

Intermediate level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology

BSP250

Manufacturer Part Number
BSP250
Description
Intermediate level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology
Manufacturer
NXP Semiconductors
Type
Power MOSFETr
Datasheet

Specifications of BSP250

Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.25Ohm
Drain-source On-volt
30V
Gate-source Voltage (max)
±20V
Continuous Drain Current
3A
Power Dissipation
1.65W
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3 +Tab
Package Type
SOT-223
Lead Free Status / Rohs Status
Compliant

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Company
Part Number
Manufacturer
Quantity
Price
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PH
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Philips Semiconductors
1997 Jun 20
P-channel enhancement mode vertical
D-MOS transistor
NOTES
10
Product specification
BSP250

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