BSP250 NXP Semiconductors, BSP250 Datasheet - Page 7

• Manufacturer Part Number: BSP250
• Description: Intermediate level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology
• Manufacturer: NXP Semiconductors
• Type: Power MOSFETr

Specifications of BSP250

• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.25Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 3A
• Power Dissipation: 1.65W
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-223
• Lead Free Status / Rohs Status: Compliant

Philips Semiconductors
1997 Jun 20
handbook, full pagewidth
P-channel enhancement mode
vertical D-MOS transistor
R th j-s
(K/W)
Fig.12 Transient thermal resistance from junction to soldering point as a function of pulse time; typical values.
10
10
1
10
1
6
0.75
0.33
0.05
0.02
0.01
0.5
0.2
0.1
=
10
0
5
10
4
10
7
3
10
2
10
P
1
t p
Product specification
T
t p (s)
=
MBE147
BSP250
t p
T
t
1