BSP250 NXP Semiconductors, BSP250 Datasheet - Page 3

• Manufacturer Part Number: BSP250
• Description: Intermediate level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology
• Manufacturer: NXP Semiconductors
• Type: Power MOSFETr

Specifications of BSP250

• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.25Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 3A
• Power Dissipation: 1.65W
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-223
• Lead Free Status / Rohs Status: Compliant

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1. Pulse width and duty cycle limited by maximum junction temperature.
2. Device mounted on an epoxy printed-circuit board, 40
1997 Jun 20
handbook, halfpage
V
V
I
I
P
T
T
Source-drain diode
I
I
SYMBOL
D
DM
S
SM
stg
j
DS
GSO
tot
P-channel enhancement mode
vertical D-MOS transistor
P tot
(W)
2.0
1.6
1.2
0.8
0.4
0
0
drain-source voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
operating junction temperature
source current (DC)
peak pulsed source current
Fig.2 Power derating curve.
50
100
PARAMETER
150
T amb ( C)
MLB885
200
3
40
open drain
T
note 1
T
T
T
note 1
s
s
amb
s
handbook, halfpage
= 100 C
Soldering point temperature T
(1) R
100 C
100 C
1.5 mm; mounting pad for drain lead minimum 6 cm
= 25 C; note 2
= 0.01.
CONDITIONS
(A)
10
10
I D
10
10
DSon
10
1
2
1
2
1
limitation.
P
t p
T
Fig.3 SOAR.
1
=
s
(1)
t p
T
t
= 100 C.
65
MIN.
DC
10
Product specification
5
1.65
+150
150
V DS (V)
3
1.5
30
20
12
6
MAX.
10 s
BSP250
1 ms
t p =
MLB835
10
V
V
A
A
W
W
A
A
2
C
C
UNIT
2
.