AM29DL323DB-120EI Spansion Inc., AM29DL323DB-120EI Datasheet - Page 22

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AM29DL323DB-120EI

Manufacturer Part Number
AM29DL323DB-120EI
Description
Manufacturer
Spansion Inc.
Datasheet

Specifications of AM29DL323DB-120EI

Cell Type
NOR
Density
32Mb
Access Time (max)
120ns
Interface Type
Parallel
Boot Type
Bottom
Address Bus
22/21Bit
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Program/erase Volt (typ)
3/8.5 to 9.5V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8/16Bit
Number Of Words
4M/2M
Supply Current
16mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AM29DL323DB-120EI
Manufacturer:
AMD
Quantity:
20 000
Hardware Data Protection
The command sequence requirement of unlock cycles
for programming or erasing provides data protection
against inadvertent writes (refer to Table 14 for com-
mand definitions). In addition, the following hardware
data protection measures prevent accidental erasure
or programming, which might otherwise be caused by
spurious system level signals during V
and power-down transitions, or from system noise.
Low V
When V
cept any write cycles. This protects data during V
power-up and power-down. The command register
and all internal program/erase circuits are disabled,
and the device resets to the read mode. Subsequent
writes are ignored until V
system must provide the proper signals to the control
pins to prevent unintentional writes when V
greater than V
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#, CE#
or WE# do not initiate a write cycle.
Logical Inhibit
Write cycles are inhibited by holding any one of OE# =
V
CE# and WE# must be a logical zero while OE# is a
logical one.
Power-Up Write Inhibit
If WE# = CE# = V
the device does not accept commands on the rising
December 13, 2005
IL
, CE# = V
CC
CC
Write Inhibit
is less than V
IH
LKO
or WE# = V
.
IL
and OE# = V
LKO
CC
IH
, the device does not ac-
is greater than V
. To initiate a write cycle,
IH
during power up,
CC
Am29DL322D/323D/324D
power-up
LKO
. The
CC
CC
is
edge of WE#. The internal state machine is automati-
cally reset to the read mode on power-up.
COMMON FLASH MEMORY INTERFACE
(CFI)
The Common Flash Interface (CFI) specification out-
lines device and host system software interrogation
handshake, which allows specific vendor-specified
software algorithms to be used for entire families of
devices. Software support can then be device-inde-
pendent, JEDEC ID-independent, and forward- and
backward-compatible for the specified flash device
families. Flash vendors can standardize their existing
interfaces for long-term compatibility.
This device enters the CFI Query mode when the sys-
tem writes the CFI Query command, 98h, to address
55h in word mode (or address AAh in byte mode), any
time the device is ready to read array data. The
system can read CFI information at the addresses
given in Tables 10–13. To terminate reading CFI data,
the system must write the reset command. The CFI
Query mode is not accessible when the device is exe-
cuting an Embedded Program or Embedded Erase
algorithm.
The system can also write the CFI query command
when the device is in the autoselect mode. The device
enters the CFI query mode, and the system can read
CFI data at the addresses given in Tables 10–13. The
system must write the reset command to return the
device to the autoselect mode.
For further information, please refer to the CFI Specifi-
cation and CFI Publication 100, available via the
Wor ld Wide Web at http://www.amd.com/prod-
ucts/nvd/overview/cfi.html. Alternatively, contact an
AMD representative for copies of these documents.
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