PSMN063-150D NXP Semiconductors, PSMN063-150D Datasheet - Page 5

• Manufacturer Part Number: PSMN063-150D
• Description: SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors
• Type: Power MOSFETr

Specifications of PSMN063-150D

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.063Ohm
• Drain-source On-volt: 150V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 29A
• Power Dissipation: 150W
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: DPAK
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
6. Characteristics
Table 6.
PSMN063-150D_4
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
Source-drain diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
G(tot)
GS
GD
r
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
reverse recovery time
recovered charge
Conditions
I
I
I
I
I
V
V
V
V
V
see
V
see
I
see
I
T
I
see
V
see
V
R
I
I
V
D
D
D
D
D
D
D
D
S
S
j
DS
DS
GS
GS
GS
GS
DS
DS
G(ext)
DS
= 250 µA; V
= 250 µA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 30 A; V
= 30 A; V
= 25 °C; see
= 30 A; V
= 25 A; V
= 20 A; dI
Figure 10
Figure 10
Figure 12
Figure 12
Figure 13
= 150 V; V
= 150 V; V
= 25 V; V
= 75 V; R
= 25 V; T
= 10 V; V
= -10 V; V
= 10 V; I
= 10 V; I
= 5.6 Ω; T
Rev. 04 — 17 December 2009
GS
DS
DS
DS
S
DS
DS
DS
D
D
/dt = -100 A/µs; V
j
GS
DS
L
GS
GS
and
and
DS
= 25 °C
= V
= V
= V
= 15 A; T
= 15 A; T
= 120 V; V
= 120 V; V
= 120 V; V
= 0 V; T
GS
GS
Figure 12
= 2.7 Ω; V
= 0 V; T
= 0 V; f = 1 MHz; T
j
= 0 V; T
= 0 V; T
= 0 V; T
= 25 °C
= 0 V; T
= 0 V; T
GS
GS
GS
11
11
; T
; T
; T
N-channel TrenchMOS SiliconMAX standard level FET
j
j
j
j
= 25 °C; see
j
j
= 175 °C; see
= -55 °C; see
= 25 °C; see
j
= 175 °C;
= 25 °C;
j
j
GS
GS
GS
j
GS
= 25 °C
j
j
= -55 °C
= 25 °C
= 25 °C
= 25 °C
= 175 °C
= 10 V; T
= 120 V;
= 10 V; T
= 10 V;
GS
= 0 V;
j
= 25 °C;
Figure 14
Figure 9
j
j
Figure 9
= 25 °C;
= 25 °C;
Figure 9
PSMN063-150D
Min
133
150
1
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
3
0.05
-
0.02
0.02
-
60
55
10
20
2390
240
98
14
50
48
38
0.9
105
0.55
© NXP B.V. 2009. All rights reserved.
Max
-
-
-
6
4
10
500
100
100
176
63
-
-
27
-
-
-
-
-
-
-
1.2
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
ns
µC
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