PSMN063-150D NXP Semiconductors, PSMN063-150D Datasheet - Page 6

• Manufacturer Part Number: PSMN063-150D
• Description: SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors
• Type: Power MOSFETr

Specifications of PSMN063-150D

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.063Ohm
• Drain-source On-volt: 150V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 29A
• Power Dissipation: 150W
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: DPAK
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
PSMN063-150D_4
Product data sheet
Fig 5.
Fig 7.
(A)
(A)
I
I
10
10
10
10
10
10
D
D
30
20
10
−1
−2
−3
−4
−5
−6
0
gate-source voltage
function of gate-source voltage; typical values
Sub-threshold drain current as a function of
Transfer characteristics: drain current as a
0
0
2
2
T
j
min
= 175 °C
4
typ
4
25 °C
max
6
V
GS
V
003aaa152
GS
(V)
03aa35
(V)
Rev. 04 — 17 December 2009
8
6
N-channel TrenchMOS SiliconMAX standard level FET
Fig 6.
Fig 8.
(A)
I
g
(S)
D
fs
10
20
30
40
30
20
10
0
0
function of drain-source voltage; typical values
drain current; typical values
Output characteristics: drain current as a
Forward transconductance as a function of
0
0
0.4
V
GS
10
PSMN063-150D
0.8
(V) = 10
8.0
T
j
T
= 175 °C
j
= 25 °C
1.2
20
© NXP B.V. 2009. All rights reserved.
1.6
I
D
V
003aaa150
6.0
003aaa153
DS
(A)
(V)
5.4
4.8
4.6
4.4
5.2
5.0
2.0
30
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