TDK5100GEG Infineon Technologies, TDK5100GEG Datasheet - Page 27

• Manufacturer Part Number: TDK5100GEG
• Manufacturer: Infineon Technologies

Specifications of TDK5100GEG

• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Product Depth (mm): 4.4mm
• Operating Supply Voltage (min): 2.1V
• Operating Supply Voltage (typ): 2.5/3.3V
• Lead Free Status / Rohs Status: Compliant

Wireless Components
Example for the FSK-Mode:
FSK modulation is achieved by switching the load capacitance of the crystal as
shown below.
The frequency deviation of the crystal oscillator is multiplied with the divider
factor N of the Phase Locked Loop to the output of the power amplifier. In case
of small frequency deviations (up to +/- 1000 ppm), the two desired load
capacitances can be calculated with the formula below.
Because of the inductive part of the TDK 5100, these values must be corrected
by Formula 1). The value of Cv± can be calculated.
C
C
f:
N:
df:
:
L
0
:
:
division ratio of the PLL
peak frequency deviation
crystal load capacitance for nominal frequency
shunt capacitance of the crystal
frequency
CL
-R
f: angular frequency
3 - 8
FSKDTA
Csw
CL
L
IC
1
#
C
N
0
*
N
FSKOUT
COSC
f
f
*
1
f
1 (
f
1
1 (
f, CL Cv1
( 2
C
( 2
0
C
C
1
0
C
CL
1
Specification, October 2002
CL
)
)
)
)
Cv2
Applications
TDK 5100