PSMN070-200P NXP Semiconductors, PSMN070-200P Datasheet - Page 8

• Manufacturer Part Number: PSMN070-200P
• Description: MOSFET Power RAIL PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of PSMN070-200P

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.07 Ohms
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 35 A
• Power Dissipation: 250 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Fall Time: 90 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 100 ns
• Lead Free Status / Rohs Status: Details
• Other names: PSMN070-200P,127

Philips Semiconductors
August 1999
MECHANICAL DATA
Notes
1. This product is supplied in anti-static packaging. The gate-source input must be protected against static
2. Refer to mounting instructions for SOT78 (TO220AB) package.
3. Epoxy meets UL94 V0 at 1/8".
N-channel TrenchMOS
discharge during transport or handling.
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220
DIMENSIONS (mm are the original dimensions)
Note
1. Terminals in this zone are not tinned.
UNIT
mm
OUTLINE
VERSION
Fig.16. SOT78 (TO220AB); pin 2 connected to mounting base (Net mass:2g)
SOT78
4.5
4.1
A
1.39
1.27
A 1
0.9
0.7
b
IEC
D
L
(TM)
b 1
1.3
1.0
L 2
D 1
(1)
b 1
0.7
0.4
c
transistor
TO-220
JEDEC
15.8
15.2
1
e
D
E
P
REFERENCES
2
e
6.4
5.9
D 1
0
3
b
10.3
9.7
E
L 1
q
scale
EIAJ
8
5
2.54
e
10 mm
PSMN070-200B; PSMN070-200P
15.0
13.5
L
3.30
2.79
L 1
L 2
max.
Q
3.0
(1)
A
A 1
PROJECTION
3.8
3.6
c
EUROPEAN
P
3.0
2.7
q
2.6
2.2
Q
ISSUE DATE
97-06-11
Product specification
SOT78
Rev 1.000