SI4980DY-T1 Vishay, SI4980DY-T1 Datasheet

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SI4980DY-T1

Manufacturer Part Number
SI4980DY-T1
Description
MOSFET Power 80V 3.7A 2W
Manufacturer
Vishay
Datasheet

Specifications of SI4980DY-T1

Configuration
Dual Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.075 Ohms
Drain-source Breakdown Voltage
80 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3.7 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Fall Time
10 ns
Minimum Operating Temperature
- 55 C
Rise Time
10 ns
Lead Free Status / Rohs Status
No

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4980DY-T1
Manufacturer:
VISHAY
Quantity:
12 435
Part Number:
SI4980DY-T1-E3
Manufacturer:
VISHAY
Quantity:
12 978
Part Number:
SI4980DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI4980DY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on FR4 board, t ≤ 10 s.
Document Number: 70646
S09-0869-Rev. E, 18-May-09
Ordering Information:
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
V
DS
80
(V)
G
G
S
S
1
1
2
2
1
2
3
4
Si4980DY -T1-E3
Si4980DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
Top View
0.095 at V
0.075 at V
SO-8
R
DS(on)
J
a
= 150 °C)
a
Dual N-Channel 80-V (D-S) MOSFET
GS
GS
(Ω)
8
7
6
5
= 6.0 V
= 10 V
(Lead (Pb)-free)
D
D
D
D
a
1
1
2
2
a
A
I
= 25 °C, unless otherwise noted
D
3.7
3.2
(A)
T
T
T
T
A
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Compliant to RoHS Directive 2002/95/EC
Symbol
Symbol
T
R
Definition
J
V
V
I
P
, T
DM
I
I
thJA
GS
DS
D
S
D
stg
®
Power MOSFETs
G
N-Channel MOSFET
- 55 to 150
Limit
Limit
± 20
62.5
3.7
2.9
1.7
2.0
1.3
80
30
D
S
Vishay Siliconix
Si4980DY
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

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SI4980DY-T1 Summary of contents

Page 1

... Top View Ordering Information: Si4980DY -T1-E3 (Lead (Pb)-free) Si4980DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si4980DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time ...

Page 3

... I - Drain Current (A) D On-Resistance vs. Drain Current 3 Total Gate Charge (nC) g Gate Charge Document Number: 70646 S09-0869-Rev. E, 18-May- Si4980DY Vishay Siliconix 125 ° ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics 1200 900 C iss 600 300 C oss C rss Drain-to-Source Voltage (V) DS Capacitance 2.0 ...

Page 4

... Si4980DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 1.0 0.5 0.0 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 5

... BSC 5.80 6.20 0.25 0.50 0.50 0.93 0° 8° 0.44 0.64 Package Information Vishay Siliconix H C All Leads 0.101 mm q 0.004" INCHES Min Max 0.053 0.069 0.004 0.008 0.014 0.020 0.010 0.189 0.196 ...

Page 6

... See Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs, (http://www.vishay.com/ppg?72286), for the basis of the pad design for a LITTLE FOOT SO-8 power MOSFET. In converting this recommended minimum pad ...

Page 7

... Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.022 (0.559) Return to Index Return to Index www.vishay.com 22 0.172 (4.369) 0.028 (0.711) 0.050 (1.270) Recommended Minimum Pads Dimensions in Inches/(mm) Document Number: 72606 Revision: 21-Jan-08 ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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