SI4980DY-T1 Vishay, SI4980DY-T1 Datasheet - Page 3

• Manufacturer Part Number: SI4980DY-T1
• Description: MOSFET Power 80V 3.7A 2W
• Manufacturer: Vishay

Specifications of SI4980DY-T1

• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.075 Ohms
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.7 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Fall Time: 10 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 10 ns
• Lead Free Status / Rohs Status: No

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 70646
S09-0869-Rev. E, 18-May-09
0.20
0.16
0.12
0.08
0.04
0.00
30
24
18
12
10
6
0
8
6
4
2
0
0
0
0
V
I
D
DS
= 3.7 A
On-Resistance vs. Drain Current
1
= 40 V
6
3
V
DS
Output Characteristics
Q
- Drain-to-Source Voltage (V)
g
I
D
- Total Gate Charge (nC)
- Drain Current (A)
Gate Charge
12
2
6
V
GS
= 10 V thru 6 V
V
18
3
GS
9
= 6 V
V
GS
24
12
4
= 10 V
5 V
4 V
30
15
5
1200
900
600
300
2.0
1.6
1.2
0.8
0.4
0.0
30
24
18
12
0
6
0
- 50
0
0
On-Resistance vs. Junction Temperature
C
rss
- 25
V
I
D
GS
1
10
= 3.7 A
= 10 V
V
V
C
DS
0
T
GS
Transfer Characteristics
oss
J
2
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
20
25 °C
25
Capacitance
T
C
3
= 125 °C
50
30
C
Vishay Siliconix
iss
4
75
Si4980DY
40
- 55 °C
5
100
www.vishay.com
50
125
6
150
60
7
3