SI4980DY-T1 Vishay, SI4980DY-T1 Datasheet - Page 2

• Manufacturer Part Number: SI4980DY-T1
• Description: MOSFET Power 80V 3.7A 2W
• Manufacturer: Vishay

Specifications of SI4980DY-T1

• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.075 Ohms
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.7 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Fall Time: 10 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 10 ns
• Lead Free Status / Rohs Status: No

Si4980DY
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. For design aid only; not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
b
a
a
a
J
= 25 °C, unless otherwise noted
a
Symbol
R
V
I
t
t
I
I
DS(on)
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
Q
g
R
t
t
t
SD
rr
fs
gs
gd
r
f
g
g
V
V
I
DS
DS
D
I
≅ 1 A, V
F
= 40 V, V
V
= 80 V, V
V
V
V
V
V
= 1.7 A, dI/dt = 100 A/µs
V
V
DS
I
DS
GS
S
DD
DS
DS
GS
DS
Test Conditions
= 1.7 A, V
= 0 V, V
= V
= 6.0 V, I
= 80 V, V
= 5 V, V
= 40 V, R
= 10 V, I
= 15 V, I
GEN
GS
GS
GS
, I
= 10 V, R
= 10 V, I
= 0 V, T
GS
D
GS
D
D
GS
D
GS
= 250 µA
L
= ± 20 V
= 3.7 A
= 3.7 A
= 3.2 A
= 10 V
= 40 Ω
= 0 V
= 0 V
J
D
g
= 55 °C
= 3.7 A
= 6 Ω
Min.
20
2
1
0.062
0.071
Typ.
S09-0869-Rev. E, 18-May-09
3.2
12
15
10
10
30
10
75
4
Document Number: 70646
± 100
0.075
0.095
Max.
110
1.2
5.1
20
30
20
20
60
20
1
Unit
nA
µA
nC
ns
Ω
Ω
V
A
S
V