SI4980DY-T1 Vishay, SI4980DY-T1 Datasheet - Page 4

• Manufacturer Part Number: SI4980DY-T1
• Description: MOSFET Power 80V 3.7A 2W
• Manufacturer: Vishay

Specifications of SI4980DY-T1

• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.075 Ohms
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.7 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Fall Time: 10 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 10 ns
• Lead Free Status / Rohs Status: No

Si4980DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70646.
www.vishay.com
4
- 0.5
- 1.0
1.0
0.5
0.0
20
10
1
0.01
- 50
0.1
0
2
1
10
- 25
0.02
-4
Source-Drain Diode Forward Voltage
0.2
0.1
Duty Cycle = 0.5
0.05
0.2
V
0
SD
T
T
J
Threshold Voltage
- Source-to-Drain Voltage (V)
J
0.4
= 150 °C
- Temperature (°C)
25
10
Single Pulse
50
0.6
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
I
D
75
= 250 µA
0.8
100
T
J
= 25 °C
1.0
125
10
-2
150
Square Wave Pulse Duration (s)
1.2
10
-1
0.20
0.15
0.10
0.05
0.00
50
40
30
20
10
0
0.01
0
On-Resistance vs. Gate-to-Source Voltage
I
D
= 3.7 A
2
V
GS
0.10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
1
P
- Gate-to-Source Voltage (V)
Single Pulse Power
DM
JM
- T
4
t
A
1
Time (s)
= P
S09-0869-Rev. E, 18-May-09
t
2
DM
Document Number: 70646
1.00
Z
thJA
thJA
6
t
t
1
2
(t)
= 62.5 °C/W
10
8
10.00
30
10