SUB70N03-09P Vishay, SUB70N03-09P Datasheet - Page 3

• Manufacturer Part Number: SUB70N03-09P
• Description: MOSFET Power 30V 70A 93W
• Manufacturer: Vishay

Specifications of SUB70N03-09P

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.009 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 70 A
• Power Dissipation: 93 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-263
• Fall Time: 12 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 7 ns
• Lead Free Status / Rohs Status: No

Document Number: 70821
S-59917—Rev. A, 28-Sep-98
V
GS
= 10 thru 7 V
4000
3000
2000
1000
180
150
120
100
90
60
30
80
60
40
20
0
0
0
0
0
0
10
C
rss
V
V
2
6
DS
DS
Output Characteristics
20
– Drain-to-Source Voltage (V)
– Drain-to-Source Voltage (V)
Transconductance
I
D
– Drain Current (A)
Capacitance
12
4
30
C
C
iss
oss
40
18
6
50
6 V
T
C
5 V
24
= –55 C
3 V
8
125 C
60
25 C
4 V
10
70
30
0.030
0.025
0.020
0.015
0.010
0.005
100
80
60
40
20
10
0
0
8
6
4
2
0
0
0
0
V
I
D
DS
= 70 A
On-Resistance vs. Drain Current
= 15 V
20
10
V
1
SUP/SUB70N03-09P
GS
Transfer Characteristics
Q
g
– Gate-to-Source Voltage (V)
I
V
D
– Total Gate Charge (nC)
GS
www.vishay.com FaxBack 408-970-5600
– Drain Current (A)
Gate Charge
25 C
40
20
2
= 4.5 V
T
C
= 125 C
Vishay Siliconix
60
30
3
V
GS
= 10 V
80
40
–55 C
4
100
50
5
2-3