SUB70N03-09P Vishay, SUB70N03-09P Datasheet - Page 4

• Manufacturer Part Number: SUB70N03-09P
• Description: MOSFET Power 30V 70A 93W
• Manufacturer: Vishay

Specifications of SUB70N03-09P

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.009 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 70 A
• Power Dissipation: 93 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-263
• Fall Time: 12 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 7 ns
• Lead Free Status / Rohs Status: No

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2-4
SUP/SUB70N03-09P
Vishay Siliconix
0.01
0.1
2
1
2.4
2.0
1.6
1.2
0.8
0.4
80
60
40
20
10
0
0
–50
0
–5
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
On-Resistance vs. Junction Temperature
V
I
–25
D
GS
= 30 A
25
= 10 V
Maximum Drain Current vs.
T
0
J
T
50
C
– Junction Temperature ( C)
Single Pulse
Case Temperature
– Case Temperature ( C)
25
10
75
50
–4
75
100
Normalized Thermal Transient Impedance, Junction-to-Case
100
125
125
10
150
–3
150
Square Wave Pulse Duration (sec)
175
175
10
–2
500
100
10
100
1
0.1
10
1
0
by r
Limited
DS(on)
Source-Drain Diode Forward Voltage
T
V
J
DS
10
= 150 C
0.3
V
–1
Single Pulse
SD
T
– Drain-to-Source Voltage (V)
Safe Operating Area
C
1
– Source-to-Drain Voltage (V)
= 25 C
0.6
S-59917—Rev. A, 28-Sep-98
10
T
0.9
J
Document Number: 70821
= 25 C
1
1.2
10 s
100 s
1 ms
10 ms
100 ms
dc
3
100
1.5