LH28F800BJHE-PBTLT9 Sharp Microelectronics, LH28F800BJHE-PBTLT9 Datasheet - Page 38

• Manufacturer Part Number: LH28F800BJHE-PBTLT9
• Description: Flash Mem Parallel 3V/3.3V 8M-Bit 1M x 8 90ns 48-Pin TSOP
• Manufacturer: Sharp Microelectronics

Specifications of LH28F800BJHE-PBTLT9

• Package: 48TSOP
• Cell Type: NOR
• Density: 8 Mb
• Architecture: Sectored
• Block Organization: Asymmetrical
• Location Of Boot Block: Bottom
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 8KByte x 8|64KByte x 15
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

ADDRESSES(A)
DATA(D/Q)
(DQ
DATA(D/Q)
(DQ
BYTE#(F)
OE#(G)
CE#(E)
8
0
-DQ
-DQ
V
V
V
V
V
V
V
V
V
V
V
V
15
7
OH
OH
OL
OL
IH
IH
IH
IH
)
IL
IL
IL
IL
)
HIGH Z
HIGH Z
Standby
Address Selection
Device
t
ELFV
Figure 17. BYTE# timing Waveform
Address Stable
t
AVQV
t
ELQX
t
ELQV
t
GLQX
t
GLQV
t
FLQZ
Output
t
Data
AVAV
Data Output
t
FVQV
Data Valid
Output
Valid
t
t
t
OH
EHQZ
GHQZ
HIGH Z
HIGH Z
Rev. 1.27