DA28F640J5-150 Intel, DA28F640J5-150 Datasheet - Page 23

• Manufacturer Part Number: DA28F640J5-150
• Description: Flash Mem Parallel 5V 64M-Bit 8M x 8/4M x 16 150ns 56-Pin SSOP
• Manufacturer: Intel

Specifications of DA28F640J5-150

• Package: 56SSOP
• Cell Type: NOR
• Density: 64 Mb
• Architecture: Sectored
• Block Organization: Symmetrical
• Typical Operating Supply Voltage: 5 V
• Sector Size: 128KByte x 64
• Support Of Common Flash Interface: Yes
• Timing Type: Asynchronous
• Operating Temperature: 0 to 70 °C
• Interface Type: Parallel

4.2.5
The following device information can optimize system interface software.
Offset
ADVANCE INFORMATION
1Bh
1Ch
1Dh
1Eh
1Fh
20h
21h
22h
23h
24h
25h
26h
SYSTEM INTERFACE INFORMATION
Length
(bytes)
01h
01h
01h
01h
01h
01h
01h
01h
01h
01h
01h
01h
V
Program/Erase voltage
V
Program/Erase voltage
V
Minimum Program/Erase voltage
V
Maximum Program/Erase voltage
Typical time-out per single byte/word
program, 2
Typical time-out for max. buffer write,
2
Typical time-out per individual block
erase, 2
Typical time-out for full chip erase,
2
Maximum time-out for byte/word program,
2
Maximum time-out for buffer write,
2
Maximum time-out per individual
block erase, 2
Maximum time-out for chip erase,
2
N
N
N
N
N
CC
CC
PP
PP
µs
ms (0000h = not supported)
times typical
times typical
times typical (00h = not supported)
bits 7–4
bits 3–0
bits 7–4
bits 3–0
bits 7–4
bits 3–0
bits 7–4
bits 3–0
[Programming] Supply
[Programming] Supply
Logic Supply Minimum
Logic Supply Maximum
INTEL StrataFlash™ MEMORY TECHNOLOGY, 32 AND 64 MBIT
Table 10. System Interface Information
N
ms
N
µs
N
times typical
BCD volts
BCD 100 mv
BCD volts
BCD 100 mv
HEX volts
BCD 100 mv
HEX volts
BCD 100 mv
Description
1B:
1C:
1D:
1E:
1F:
20:
21:
22:
23:
24:
25:
26:
StrataFlash™
Memory
Intel
0045h
0055h
0000h
0000h
0007h
0007h
000Ah
0000h
0004h
0004h
0004h
0000h
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