PHKD13N03LT,118 NXP Semiconductors, PHKD13N03LT,118 Datasheet - Page 4

• Manufacturer Part Number: PHKD13N03LT,118
• Description: MOSFET N-CH TRENCH DL 30V 8SOIC
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PHKD13N03LT,118

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 10.4A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 10.7nC @ 5V
• Input Capacitance (ciss) @ Vds: 752pF @ 15V
• Power - Max: 3.57W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

NXP Semiconductors
5. Thermal characteristics
Table 5.
PHKD13N03LT
Product data sheet
Symbol
R
R
Fig 4.
th(j-sp)
th(j-a)
Z
(K/W)
th(j-sp)
10
10
10
-1
2
1
10
Transient thermal impedance from junction to solder point as a function of pulse duration
-4
Thermal characteristics
δ = 0.5
0.2
0.1
0.05
0.02
Parameter
thermal resistance from
junction to solder point
thermal resistance from
junction to ambient
single pulse
10
-3
All information provided in this document is subject to legal disclaimers.
Conditions
see
minimum footprint; mounted on a
printed-circuit board
10
Rev. 03 — 27 April 2010
-2
Figure 4
10
-1
Dual N-channel TrenchMOS logic level FET
PHKD13N03LT
Min
-
-
1
P
t
Typ
-
70
p
T
t
p
© NXP B.V. 2010. All rights reserved.
(s)
003aaa415
δ =
Max
35
-
T
t
p
t
10
Unit
K/W
K/W
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