PHKD13N03LT,118 NXP Semiconductors, PHKD13N03LT,118 Datasheet - Page 6

• Manufacturer Part Number: PHKD13N03LT,118
• Description: MOSFET N-CH TRENCH DL 30V 8SOIC
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PHKD13N03LT,118

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 10.4A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 10.7nC @ 5V
• Input Capacitance (ciss) @ Vds: 752pF @ 15V
• Power - Max: 3.57W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

NXP Semiconductors
PHKD13N03LT
Product data sheet
Fig 5.
Fig 7.
(A)
(A)
I
I
10
10
10
10
10
10
D
D
10
−1
−2
−3
−4
−5
−6
8
6
4
2
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
10 V 5 V
0.2
min
1
3 V
0.4
typ
VGS (V) =
max
0.6
2
V
0.8
All information provided in this document is subject to legal disclaimers.
GS
003aaa325
003aaa426
V
DS
(V)
2.8 V
2.7 V
2.6 V
2.5 V
2.4 V
2.3 V
(V)
1
3
Rev. 03 — 27 April 2010
Fig 6.
Fig 8.
V
(A)
I
GS(th)
(V)
D
2.5
1.5
0.5
10
8
6
4
2
0
2
1
0
-60
function of gate-source voltage; typical values
junction temperature
Transfer characteristics: drain current as a
Gate-source threshold voltage as a function of
0
Dual N-channel TrenchMOS logic level FET
V
DS
> I
D
× R
0
DSon
1
PHKD13N03LT
Tj = 150 °C
60
max
typ
min
2
120
V
© NXP B.V. 2010. All rights reserved.
GS
T
003aaa326
03aa33
25 °C
j
(V)
( ° C)
180
3
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