PSMN9R0-25YLC,115 NXP Semiconductors, PSMN9R0-25YLC,115 Datasheet - Page 10

• Manufacturer Part Number: PSMN9R0-25YLC,115
• Description: MOSFET Power N-chnl25V9.1m logic lvl MOSFET in LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN9R0-25YLC,115

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 9.1 mOhms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 46 A
• Power Dissipation: 34 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: LFPAK
• Fall Time: 5 ns
• Gate Charge Qg: 12 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 10 ns
• Lead Free Status / Rohs Status: Details

NXP Semiconductors
PSMN9R0-25YLC
Product data sheet
Fig 16. Input, output and reverse transfer capacitances
Fig 18. Reverse recovery timing definition
(pF)
10
C
10
10
3
2
10
as a function of drain-source voltage; typical
values
-1
1
N-channel 25 V 9.1 mΩ logic level MOSFET in LFPAK using NextPower technology
10
(A)
I
D
0
V
All information provided in this document is subject to legal disclaimers.
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DS
C
C
C
oss
iss
(V)
rss
10
Rev. 2 — 1 November 2011
2
t
a
Fig 17. Source current as a function of source-drain
t
rr
(A)
I
S
60
40
20
t
0
b
voltage; typical values
0
I
RM
003a a f 444
0.25 I
t (s )
R M
0.3
PSMN9R0-25YLC
T
j
= 150 ° C
0.6
0.9
T
© NXP B.V. 2011. All rights reserved.
j
003aag209
= 25 ° C
V
SD
(V)
1.2
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