PSMN9R0-25YLC,115 NXP Semiconductors, PSMN9R0-25YLC,115 Datasheet - Page 12

• Manufacturer Part Number: PSMN9R0-25YLC,115
• Description: MOSFET Power N-chnl25V9.1m logic lvl MOSFET in LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN9R0-25YLC,115

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 9.1 mOhms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 46 A
• Power Dissipation: 34 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: LFPAK
• Fall Time: 5 ns
• Gate Charge Qg: 12 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 10 ns
• Lead Free Status / Rohs Status: Details

NXP Semiconductors
8. Revision history
Table 7.
PSMN9R0-25YLC
Product data sheet
Document ID
PSMN9R0-25YLC v.2
Modifications:
PSMN9R0-25YLC v.1
Revision history
20111101
20110712
Release date
N-channel 25 V 9.1 mΩ logic level MOSFET in LFPAK using NextPower technology
•
•
Status changed from preliminary to product.
Various changes to content.
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 1 November 2011
Preliminary data sheet
Data sheet status
Product data sheet
Change notice
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-
PSMN9R0-25YLC
Supersedes
PSMN9R0-25YLC v.1
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© NXP B.V. 2011. All rights reserved.
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