M25P20-VMN3TPB Micron Technology Inc, M25P20-VMN3TPB Datasheet - Page 15

• Manufacturer Part Number: M25P20-VMN3TPB
• Manufacturer: Micron Technology Inc

Specifications of M25P20-VMN3TPB

• Cell Type: NOR
• Density: 2Mb
• Access Time (max): 8ns
• Interface Type: Serial (SPI)
• Address Bus: 1b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 125C
• Package Type: SO N
• Program/erase Volt (typ): 2.3 to 3.6V
• Sync/async: Synchronous
• Operating Temperature Classification: Automotive
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 256K
• Supply Current: 8mA
• Mounting: Surface Mount
• Pin Count: 8
• Lead Free Status / Rohs Status: Compliant

5
Memory organization
The memory is organized as:
Each page can be individually programmed (bits are programmed from 1 to 0). The device is
Sector or Bulk Erasable (bits are erased from 0 to 1) but not Page Erasable.
Table 3.
Figure 6.
HOLD
W
S
C
D
Q
262,144 bytes (8 bits each)
4 sectors (512 Kbits, 65536 bytes each)
1024 pages (256 bytes each).
Sector
3
2
1
0
Memory Organization
Block Diagram
Address Register
Control Logic
and Counter
30000h
20000h
10000h
00000h
30000h
20000h
10000h
00000h
I/O Shift Register
256 Bytes (Page Size)
High Voltage
Generator
X Decoder
Data Buffer
Address Range
256 Byte
3FFFFh
000FFh
3FFFFh
2FFFFh
1FFFFh
0FFFFh
Register
Status
memory area
Size of the
read-only
AI04079
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