M25P20-VMN3TPB Micron Technology Inc, M25P20-VMN3TPB Datasheet - Page 40

• Manufacturer Part Number: M25P20-VMN3TPB
• Manufacturer: Micron Technology Inc

Specifications of M25P20-VMN3TPB

• Cell Type: NOR
• Density: 2Mb
• Access Time (max): 8ns
• Interface Type: Serial (SPI)
• Address Bus: 1b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 125C
• Package Type: SO N
• Program/erase Volt (typ): 2.3 to 3.6V
• Sync/async: Synchronous
• Operating Temperature Classification: Automotive
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 256K
• Supply Current: 8mA
• Mounting: Surface Mount
• Pin Count: 8
• Lead Free Status / Rohs Status: Compliant

40/55
Table 19.
1. t
2. Value guaranteed by characterization, not 100% tested in production.
3. Expressed as a slew-rate.
4. Only applicable as a constraint for a WRSR instruction when SRWD is set at 1.
5. It is 30µs in devices produced with the “X” process technology (grade 3 devices are only produced using
Symbol
t
t
t
t
t
t
t
t
t
HHQX
WHSL
SHWL
CLCH
CHCL
SHQZ
HLQZ
RES1
RES2
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
DVCH
CHDX
CHSH
SHCH
CHHH
HHCH
CLQV
CLQX
HLCH
CHHL
CH
SLCH
CHSL
SHSL
DP
the “X” process technology). Details of how to find the process letter on the device marking are given in the
Application note AN1995.
CL
CH
f
f
C
R
(1)
(1)
(2)
+ t
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(4)
(4)
CL
must be greater than or equal to 1/ f
AC Characteristics (25MHz Operation, Device Grade 6 or 3)
t
t
t
t
t
Alt.
t
t
t
CLH
CSS
DSU
CSH
t
CLL
t
DIS
HO
f
DH
t
HZ
LZ
C
V
Clock Frequency for the following
instructions: FAST_READ, PP, SE, BE,
DP, RES, WREN, WRDI, RDSR, WRSR
Clock Frequency for READ instructions
Clock High Time
Clock Low Time
Clock Rise Time
Clock Fall Time
S Active Setup Time (relative to C)
S Not Active Hold Time (relative to C)
Data In Setup Time
Data In Hold Time
S Active Hold Time (relative to C)
S Not Active Setup Time (relative to C)
S Deselect Time
Output Disable Time
Clock Low to Output Valid
Output Hold Time
HOLD Setup Time (relative to C)
HOLD Hold Time (relative to C)
HOLD Setup Time (relative to C)
HOLD Hold Time (relative to C)
HOLD to Output Low-Z
HOLD to Output High-Z
Write Protect Setup Time
Write Protect Hold Time
S High to Deep Power-down Mode
S High to Standby Mode without
Electronic Signature Read
S High to Standby Mode with Electronic
Signature Read
Test conditions specified in
Parameter
(3)
(3)
(peak to peak)
(peak to peak)
C
Table 10
and
Min.
D.C.
D.C.
100
100
0.1
0.1
18
18
10
10
10
10
10
10
10
10
20
Table 18
5
5
0
Typ.
1.8 or 30
3 or 30
Max.
25
20
15
15
15
20
3
(5)
(5)
Unit
MHz
MHz
V/ns
V/ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
µs