M25P20-VMN3TPB Micron Technology Inc, M25P20-VMN3TPB Datasheet - Page 32

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M25P20-VMN3TPB

Manufacturer Part Number
M25P20-VMN3TPB
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of M25P20-VMN3TPB

Cell Type
NOR
Density
2Mb
Access Time (max)
8ns
Interface Type
Serial (SPI)
Address Bus
1b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
-40C to 125C
Package Type
SO N
Program/erase Volt (typ)
2.3 to 3.6V
Sync/async
Synchronous
Operating Temperature Classification
Automotive
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
256K
Supply Current
8mA
Mounting
Surface Mount
Pin Count
8
Lead Free Status / Rohs Status
Compliant
Figure 18. Release from Deep Power-down and Read Electronic Signature (RES) Instruction
1. The value of the 8-bit Electronic Signature, for the M25P20, is 11h.
Figure 19. Release from Deep Power-down (RES) Instruction Sequence
32/55
S
C
D
Q
S
C
D
Q
0
Sequence and Data-Out Sequence
Driving Chip Select (S) High after the 8-bit instruction byte has been received by the device,
but before the whole of the 8-bit Electronic Signature has been transmitted for the first time
(as shown in
device was not previously in the Deep Power-down mode, the transition to the Standby
Power mode is immediate. If the device was previously in the Deep Power-down mode,
though, the transition to the Standby Power mode is delayed by t
must remain High for at least t
Power mode, the device waits to be selected, so that it can receive, decode and execute
instructions.
1
High Impedance
2
Instruction
3
4
High Impedance
0
Figure
5
1
6
2
Instruction
7
19), still ensures that the device is put into Standby Power mode. If the
3
MSB
23
8
4
22 21
9 10
3 Dummy Bytes
5
6
RES1
7
3
28 29 30 31 32 33 34 35
(max), as specified in
2
1
Deep Power-down Mode
0
MSB
7
Electronic Signature Out
Deep Power-down Mode
t
RES1
6
5
4
3
Table
36 37 38
2
Stand-by Mode
1
19. Once in the Standby
RES1
0
, and Chip Select (S)
t
RES2
Stand-by Mode
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