BFP620H7764XT Infineon Technologies, BFP620H7764XT Datasheet - Page 3

• Manufacturer Part Number: BFP620H7764XT
• Manufacturer: Infineon Technologies

Specifications of BFP620H7764XT

• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 2.3V
• Collector-base Voltage: 7.5V
• Emitter-base Voltage: 1.2V
• Collector Current (dc) (max): 80mA
• Dc Current Gain (min): 110
• Power Dissipation: 185mW
• Frequency (max): 65GHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-343
• Lead Free Status / Rohs Status: Compliant

1
2
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
Electrical Characteristics at T
Parameter
AC Characteristics (verified by random sampling)
Transition frequency
I
Collector-base capacitance
V
emitter grounded
Collector emitter capacitance
V
base grounded
Emitter-base capacitance
V
collector grounded
Minimum noise figure
I
I
Power gain, maximum stable
I
Z
Power gain, maximum available
I
Z
Transducer gain
I
f = 1.8 GHz
f = 6 GHz
Third order intercept point at output
V
1dB compression point at output
I
C
C
C
C
C
C
C
G
IP3 value depends on termination of all intermodulation frequency components.
S
S
CB
CE
EB
CE
ms
= 50 mA, V
= 5 mA, V
= 5 mA, V
= 50 mA, V
= 50 mA, V
= 50 mA, V
= 50 mA, V
= Z
= Z
= 0.5 V, f = 1 MHz, V
= 2 V, f = 1 MHz, V
= 2 V, f = 1 MHz, V
= 2 V, I
= |S
Sopt
Sopt
21
, Z
, Z
/ S
C
CE
CE
12
L
L
CE
CE
CE
= 50 mA, Z
CE
CE
= Z
= Z
|
= 1.5 V, f=1.8GHz Z
= 1.5 V, f= 6GHz Z
= 1.5 V, f = 1 GHz
= 1.5 V, f = 1.8GHz ,
=1.5 V, Z
= 2 V, Z
= 1.5 V, f = 6 GHz,
Lopt
Lopt
BE
BE
S
S
CB
S
=Z
= 0 ,
= 0 ,
=Z
=Z
= 0 ,
1)
L
L
=50 Ω, f=1.8GHz
L
=50 Ω, f=1.8 GHz
=50 Ω
A
= 25°C, unless otherwise specified
2)
S
S
= Z
= Z
Sopt
Sopt
3
Symbol
f
C
C
C
NF
G
G
|S
IP
P
T
-1dB
cb
ce
eb
ms
ma
21e
3
min
|
2
min.
-
-
-
-
-
-
-
-
-
-
-
-
Values
21.5
25.5
14.5
0.12
0.22
0.46
typ.
0.7
1.3
9.5
20
65
11
2010-09-21
max.
0.2
-
-
-
-
-
-
-
-
-
-
-
BFP620
Unit
GHz
pF
dB
dB
dB
dB
dBm