BFP620H7764XT Infineon Technologies, BFP620H7764XT Datasheet - Page 6

• Manufacturer Part Number: BFP620H7764XT
• Manufacturer: Infineon Technologies

Specifications of BFP620H7764XT

• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 2.3V
• Collector-base Voltage: 7.5V
• Emitter-base Voltage: 1.2V
• Collector Current (dc) (max): 80mA
• Dc Current Gain (min): 110
• Power Dissipation: 185mW
• Frequency (max): 65GHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-343
• Lead Free Status / Rohs Status: Compliant

Power gain G
V
f = parameter in GHz
Minimum noise figure NF
V
CE
CE
dB
= 1.5V
= 2 V, Z
30
26
24
22
20
18
16
14
12
10
8
0
10
S
20
ma
= Z
, G
30
Sopt
ms
40
= ƒ (I
50
min
C
60
)
= ƒ (I
70 mA
C
)
I
C
0.9
1.8
2.4
3
4
5
6
90
6
Power gain G
I
f = parameter in GHz
Minimum noise figure NF
V
C
CE
= 50 mA
dB
= 2 V, Z
30
20
15
10
-5
5
0
0.2
0.6
S
ma
= Z
, G
Sopt
1
ms
= ƒ (V
1.4
min
CE
1.8
2010-09-21
= ƒ (f)
)
BFP620
V
V
0.9
1.8
2.4
3
4
5
6
CE
2.6