BFP620H7764XT Infineon Technologies, BFP620H7764XT Datasheet - Page 5

• Manufacturer Part Number: BFP620H7764XT
• Manufacturer: Infineon Technologies

Specifications of BFP620H7764XT

• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 2.3V
• Collector-base Voltage: 7.5V
• Emitter-base Voltage: 1.2V
• Collector Current (dc) (max): 80mA
• Dc Current Gain (min): 110
• Power Dissipation: 185mW
• Frequency (max): 65GHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-343
• Lead Free Status / Rohs Status: Compliant

Third order Intercept Point IP
(Output, Z
V
Transition frequency f
ƒ = 1 GHz
V
CE
CE
dBm
GHz
= parameter, f = 900MHz
= parameter in V
27
21
18
15
12
65
55
50
45
40
35
30
25
20
15
10
9
6
3
0
5
0
0
0
10
10
S
= Z
20
20
L
=50 Ω )
30
30
0.3
40
40
T
50
50
= ƒ (I
0.8V
60
60
0.5
C
)
70
70
3
= ƒ (I
1.3 to 2.3
80 mA 100
80 mA 100
2.3V
1.8V
1.3V
C
I
I
1
0.8
)
C
C
5
Third order Intercept Point IP
(Output, Z
V
Power gain G
|S
V
CE
CE
21
|
dB
= parameter, f = parameter
2
= 1.5 V, I
55
45
40
35
30
25
20
15
10
5
= ƒ (f)
0
S
|S21|²
= Z
1
C
ma
Gms
L
= 50 mA
= 50 Ω )
, G
2
ms
= ƒ (f)
3
Gma
4
2010-09-21
3
= ƒ (I
BFP620
GHz
f
C
)
6