BGA771N16 Infineon Technologies, BGA771N16 Datasheet - Page 10
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BGA771N16
Manufacturer Part Number
BGA771N16
Description
Manufacturer
Infineon Technologies
Datasheet
1.BGA771N16.pdf
(33 pages)
Specifications of BGA771N16
Packages
TSNP-16-1
Frequency Hz
900 / 1900 MHz
Gain (typ)
16.0 dB
F (typ)
1.1 dB
P-1db (in)
-5
I (typ)
3.4 mA
Lead Free Status / Rohs Status
Supplier Unconfirmed
2.9
2.9.1
Table 8
Parameter
Pass band range band V
Pass band range band VI
Current consumption
Gain
Reverse Isolation
Noise figure
Input return loss
Output return loss
Stability factor
Input compression point
Inband IIP3
P
1) Verified by random sampling; not 100% RF tested
2) Not tested in production; guaranteed by device design
Data Sheet
f
1
f1
- f
= P
2
= 1 MHz
f2
= -37 dBm
1)
Measured RF Characteristics Low Band
Measured RF Characteristics UMTS Bands V / VI
Typical Characteristics 800 MHz Band,
2)
1)
1)
1)
1)
Symbol
I
I
S
S
S
S
NF
NF
S
S
S
S
k
IP
IP
IIP3
IIP3
CCHG
CCLG
21HG
21LG
12HG
12LG
11HG
11LG
22HG
22LG
1dBHG
1dBLG
HG
LG
HG
LG
Min.
869
875
BGA771N16 - Low Power Dual-Band UMTS LNA
T
10
Typ.
3.4
0.65
16.1
-7.5
-36
-8
1.1
7.5
-17
-17
-17
-13
>2.3
-6
-8
-7
2
A
Values
= 25 °C,
Max.
894
885
V
CC
Measured RF Characteristics Low Band
= 2.8 V
Unit
MHz
MHz
mA
mA
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
Electrical Characteristics
Note / Test Condition
High gain mode
Low gain mode
High gain mode
Low gain mode
High gain mode
Low gain mode
High gain mode
Low gain mode
50
50
50 , high gain mode
50 , low gain mode
DC to 10 GHz; all gain
modes
High gain mode
Low gain mode
High gain mode
Low gain mode
high gain mode
low gain mode
V3.1, 2010-03-16