BGA771N16 Infineon Technologies, BGA771N16 Datasheet - Page 12

• Manufacturer Part Number: BGA771N16
• Manufacturer: Infineon Technologies

Specifications of BGA771N16

• Packages: TSNP-16-1
• Frequency Hz: 900 / 1900 MHz
• Gain (typ): 16.0 dB
• F (typ): 1.1 dB
• P-1db (in): -5
• I (typ): 3.4 mA
• Lead Free Status / Rohs Status: Supplier Unconfirmed

2.10
2.10.1
Table 10
Parameter
Pass band range
Current consumption
Gain
Reverse Isolation
Noise figure
Input return loss
Output return loss
Stability factor
Input compression point
Inband IIP3
P
1) Verified by random sampling; not 100% RF tested
2) Not tested in production; guaranteed by device design
Data Sheet
f
1
f1
- f
= P
2
= 1 MHz
f2
= -37 dBm
1)
Measured RF Characteristics Mid Band
Measured RF Characteristics UMTS Band II
Typical Characteristics 1900 MHz Band,
2)
1)
1)
1)
1)
Symbol
I
I
S
S
S
S
NF
NF
S
S
S
S
k
IP
IP
IIP3
IIP3
CCHG
CCLG
21HG
21LG
12HG
12LG
11HG
11LG
22HG
22LG
1dBHG
1dBLG
HG
LG
HG
LG
Min.
1930
BGA771N16 - Low Power Dual-Band UMTS LNA
12
Typ.
3.4
0.65
16.0
-7.8
-35
-8
1.1
7.8
-19
-18
-20
-15
>2.4
-7
-7
-6
3
T
Values
A
= 25 °C,
Max.
1990
V
CC
Measured RF Characteristics Mid Band
= 2.8 V
Unit
MHz
mA
mA
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
Electrical Characteristics
Note / Test Condition
High gain mode
Low gain mode
High gain mode
Low gain mode
High gain mode
Low gain mode
High gain mode
Low gain mode
50
50
50 , high gain mode
50 , low gain mode
DC to 10 GHz; all gain
modes
High gain mode
Low gain mode
High gain mode
Low gain mode
high gain mode
low gain mode
V3.1, 2010-03-16