BFP420H6327XT Infineon Technologies, BFP420H6327XT Datasheet - Page 2

• Manufacturer Part Number: BFP420H6327XT
• Manufacturer: Infineon Technologies

Specifications of BFP420H6327XT

• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 4.5V
• Collector-base Voltage: 15V
• Emitter-base Voltage: 1.5V
• Collector Current (dc) (max): 35mA
• Dc Current Gain (min): 60
• Power Dissipation: 160mW
• Frequency (max): 25GHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-343
• Lead Free Status / Rohs Status: Compliant

Thermal Resistance
Parameter
Junction - soldering point
Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-emitter cutoff current
V
Collector-base cutoff current
V
Emitter-base cutoff current
V
DC current gain
I
1
C
C
For calculation of R
CE
CB
EB
= 1 mA, I
= 20 mA, V
= 0.5 V, I
= 15 V, V
= 5 V, I
B
E
= 0
C
= 0
CE
BE
= 0
thJA
= 4 V, pulse measured
= 0
please refer to Application Note Thermal Resistance
1)
A
= 25°C, unless otherwise specified
2
Symbol
V
I
I
I
h
Symbol
R
CES
CBO
EBO
FE
(BR)CEO
thJS
min.
4.5
60
-
-
-
Values
Value
typ.
95
260
5
-
-
-
max.
2007-04-20
100
130
10
3
-
BFP420
Unit
V
µA
nA
µA
-
Unit
K/W