BFP420H6327XT Infineon Technologies, BFP420H6327XT Datasheet - Page 3

• Manufacturer Part Number: BFP420H6327XT
• Manufacturer: Infineon Technologies

Specifications of BFP420H6327XT

• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 4.5V
• Collector-base Voltage: 15V
• Emitter-base Voltage: 1.5V
• Collector Current (dc) (max): 35mA
• Dc Current Gain (min): 60
• Power Dissipation: 160mW
• Frequency (max): 25GHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-343
• Lead Free Status / Rohs Status: Compliant

1
2
Termination used for this measurement is 50 from 0.1 MHz to 6 GHz
Electrical Characteristics at T
Parameter
AC Characteristics (verified by random sampling)
Transition frequency
I
Collector-base capacitance
V
emitter grounded
Collector emitter capacitance
V
base grounded
Emitter-base capacitance
V
collector grounded
Noise figure
I
Power gain, maximum stable
I
Z
Insertion power gain
V
Z
Third order intercept point at output
V
Z
1dB Compression point at output
I
f = 1.8 GHz
C
C
C
C
G ms = | S 21 / S 12 |
IP3 value depends on termination of all intermodulation frequency components.
L
S
S
CB
CE
EB
CE
CE
= 30 mA, V
= 5 mA, V
= 20 mA, V
= 20 mA, V
= Z
= Z
= Z
= 0.5 V, f = 1 MHz, V
= 2 V, f = 1 MHz, V
= 2 V, f = 1 MHz, V
= 2 V, I
= 2 V, I
Lopt
L
L
= 50
= 50
, f = 1.8 GHz
C
C
CE
CE
CE
= 20 mA, f = 1.8 GHz,
= 20 mA, f = 1.8 GHz,
CE
= 2 V, f = 1.8 GHz, Z
= 3 V, f = 2 GHz
= 2 V, Z
= 2 V, Z
BE
BE
S
S
CB
= 0 ,
= 0 ,
= Z
= Z
= 0 ,
1)
Sopt
L
A
= 50
= 25°C, unless otherwise specified
,
2)
S
,
= Z
Sopt
3
Symbol
f
C
C
C
F
G
|S
IP
P
T
-1dB
cb
ce
eb
ms
21
3
|
2
min.
18
14
-
-
-
-
-
-
-
Values
0.15
0.37
0.55
typ.
1.1
25
21
17
22
12
2007-04-20
max.
0.3
-
-
-
-
-
-
-
-
BFP420
Unit
GHz
pF
dB
dB
dBm