BFP420H6327XT Infineon Technologies, BFP420H6327XT Datasheet - Page 5

• Manufacturer Part Number: BFP420H6327XT
• Manufacturer: Infineon Technologies

Specifications of BFP420H6327XT

• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 4.5V
• Collector-base Voltage: 15V
• Emitter-base Voltage: 1.5V
• Collector Current (dc) (max): 35mA
• Dc Current Gain (min): 60
• Power Dissipation: 160mW
• Frequency (max): 25GHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-343
• Lead Free Status / Rohs Status: Compliant

For non-linear simulation:
· Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators.
· If you need simulation of the reverse characteristics, add the diode with the
· Simulation of package is not necessary for frequencies < 100MHz.
Note:
· This transistor is constructed in a common emitter configuration. This feature causes
The common emitter configuration shows the following advantages:
· Higher gain because of lower emitter inductance.
· Power is dissipated via the grounded emitter leads, because the chip is mounted
Please note, that the broadest lead is the emitter lead.
Common Emitter S- and Noise-parameter
For detailed S- and Noise-parameters please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon Technologies Application Notes
CD-ROM or see Internet: http://www.infineon.com/silicondiscretes
an additional reverse biased diode between emitter and collector, which does not
effect normal operation.
on copper emitter leadframe.
C'-E'- diode data between collector and emitter.
For higher frequencies add the wiring of package equivalent circuit around the
non-linear transistor and diode model.
Transistor Schematic Diagram
B
E
E
EHA07307
5
C
2007-04-20
BFP420