FB180SA10P Vishay Semiconductors, FB180SA10P Datasheet

FB180SA10P

Manufacturer Part Number

FB180SA10P

Description

Power MOSFET, 180 A

Manufacturer

Vishay Semiconductors

Datasheet

1.FB180SA10P.pdf (8 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

FB180SA10P

Manufacturer:

VISHAY

Quantity:

340

Company:

BOSTOCK HK LIMITED

Part Number:

FB180SA10P

Manufacturer:

Company:

Meier Automation Equipment Co., Limited

Part Number:

FB180SA10P

Manufacturer:

VISHAY/威世

Quantity:

20 000

Current page: 1 of 8
Download datasheet (161Kb)

Notes

(1)

(2)

(3)

Document Number: 94541

Revision: 30-Jul-10

查询"FB180SA10P"供应商

PRODUCT SUMMARY

ABSOLUTE MAXIMUM RATINGS

PARAMETER

Continuous drain current at V

Pulsed drain current

Power dissipation

Linear derating factor

Gate to source voltage

Single pulse avalanche energy

Avalanche current

Repetitive avalanche energy

Peak diode recovery dV/dt

Operating junction and storage temperature range

Insulation withstand voltage (AC-RMS)

Mounting torque

Repetitive rating; pulse width limited by maximum junction temperature (see fig. 8)

Starting T

 180 A, dI/dt  83 A/μs, V

Package

Type

= 25 °C, L = 43 μH, R

DS(on)

DSS

DiodesAmericas@vishay.com, DiodesAsia@vishay.com,

SOT-227

For technical questions within your region, please contact one of the following:

10 V

 V

= 25 , I

(BR)DSS

Modules - MOSFET

0.0065 

SOT-227

, T

Power MOSFET, 180 A

100 V

180 A

= 180 A (see fig. 12)

 150 °C

SYMBOL

dV/dt

, T

ISO

(1)

Stg

(2)

(1)

(3)

M4 screw

FEATURES

• Fully isolated package

• Easy to use and parallel

• Very low on-resistance

• Dynamic dV/dt rating

• Fully avalanche rated

• Simple drive requirements

• Low drain to case capacitance

• Low internal inductance

• UL pending

• Compliant to RoHS directive 2002/95/EC

DESCRIPTION

5th Generation, high current density Power MOSFETs are

paralled into a compact, high power module providing the

best combination of switching, ruggedized design, very low

on resistance and cost effectiveness.

The isolated SOT-227 package is preferred for all

commercial-industrial applications at power dissipation

levels to approximately 500 W. The low thermal resistance

and easy connection to the SOT-227 package contribute to

its universal acceptance throughout the industry.

TEST CONDITIONS

= 25 °C

= 100 °C

= 25 °C

DiodesEurope@vishay.com

Vishay Semiconductors

- 55 to + 150

MAX.

± 20

180

120

720

480

700

180

2.7

5.7

2.5

1.3

FB180SA10P

www.vishay.com

UNITS

W/°C

V/ns

°C

Related parts for FB180SA10P

FB180SA10P Summary of contents

Page 1

... ( ( ( (3) dV/ Stg V ISO M4 screw = 180 A (see fig. 12) AS  150 ° DiodesEurope@vishay.com FB180SA10P Vishay Semiconductors MAX. UNITS 180 120 A 720 480 W 2.7 W/°C ± 700 mJ 180 5.7 V/ 150 °C 2.5 kV 1.3 Nm www.vishay.com ...

Page 2

... FB180SA10P 查询"FB180SA10P"供应商 Vishay Semiconductors THERMAL RESISTANCE PARAMETER Junction to case Case to sink, flat, greased surface ELECTRICAL CHARACTERISTICS (T PARAMETER Drain to source breakdown voltage Breakdown voltage temperature coefficient Static drain to source on-resistance Gate threshold voltage Forward transconductance Drain to source leakage current ...

Page 3

... Document Number: 94541 For technical questions within your region, please contact one of the following: Revision: 30-Jul-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, Power MOSFET, 180 A ° 100 Fig Normalized On-Resistance vs. Temperature 20000 15000 10000 ° 100 9 10 FB180SA10P Vishay Semiconductors 2 180A D 2.0 1.5 1.0 0 10V GS 0.0 -60 -40 -20 ...

Page 4

... FB180SA10P 查询"FB180SA10P"供应商 Vishay Semiconductors 1000 T = 150 C ° J 100 10 ° 0.1 0.2 0.6 1.0 V ,Source-to-Drain Voltage (V) SD Fig Typical Source Drain Diode Forward Voltage 10000 OPERATION IN THIS AREA LIMITED BY R DS(on) 1000 10us 100us 100 1ms 10ms ° ...

Page 5

... SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 t , Rectangular Pulse Duration (sec) 1 1500 1200 15 V Driver + Fig. 12c - Maximum Avalanche Energy vs. Drain Current ( FB180SA10P Vishay Semiconductors Notes: 1. Duty factor Peak thJC C 0 ...

Page 6

... FB180SA10P 查询"FB180SA10P"供应商 Vishay Semiconductors Reverse Recovery Current Re-Applied Voltage www.vishay.com For technical questions within your region, please contact one of the following: 6 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, Power MOSFET, 180 A Current regulator Same type as D.U.T. 50 kΩ 0.2 µF 0.3 µF D.U. ...

Page 7

... Power MOSFET - Generation 5 MOSFET silicon DBC construction - Current rating (180 = 180 A) - Single switch - SOT-227 - Voltage rating (10 = 100 Lead (Pb)-free CIRCUIT S G (2) LINKS TO RELATED DOCUMENTS FB180SA10P Vishay Semiconductors CIRCUIT DRAWING Lead assignment D ( (1-4) www.vishay.com/doc?95036 www.vishay.com/doc?95037 www.vishay.com DiodesEurope@vishay.com ...

Page 8

... All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product ...

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