FB180SA10P Vishay Semiconductors, FB180SA10P Datasheet - Page 3

• Manufacturer Part Number: FB180SA10P
• Description: Power MOSFET, 180 A
• Manufacturer: Vishay Semiconductors

Document Number: 94541
Revision: 30-Jul-10
查询"FB180SA10P"供应商
1000
1000
1000
100
100
100
10
10
10
1
1
1
0.1
0.1
4
TOP
BOTTOM
Fig. 3 - Typical Transfer Characteristics
TOP
BOTTOM
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
T = 150 C
V
V
J
V
DS
DS
5
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
GS
, Drain-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
T = 25 C
, Gate-to-Source Voltage (V)
J
°
6
1
1
°
[e-mail], [e-mail],
4.5V
For technical questions within your region, please contact one of the following:
7
4.5V
20µs PULSE WIDTH
T = 25 C
20μs PULSE WIDTH
T = 150 C
V
20µs PULSE WIDTH
J
J
DS
10
10
8
= 25V
°
°
9
100
100
10
Power MOSFET, 180 A
Fig. 4 - Normalized On-Resistance vs. Temperature
20000
15000
10000
5000
[e-mail]
2.5
2.0
1.5
1.0
0.5
0.0
20
15
10
0
5
0
-60 -40 -20
0
1
I =
I =
D
D
Fig. 6 - Typical Gate Charge vs.
Fig. 5 - Typical Capacitance vs.
180A
50
180 A
V
T , Junction Temperature( C)
DS
Drain to Source Voltage
Q , Total Gate Charge (nC)
J
Gate to Source Voltage
C
C
C
100
G
V
C
C
C
oss
iss
rss
, Drain-to-Source Voltage (V)
0
GS
iss
rss
oss
Vishay Semiconductors
20
=
=
=
=
150
0V,
C
C
C
gs
gd
ds
40
200
+ C
+ C
10
V
V
V
60
f = 1MHz
gd ,
gd
DS
DS
DS
FOR TEST CIRCUIT
SEE FIGURE
250
80 100 120 140 160
= 80V
= 50V
= 20V
FB180SA10P
C
ds
300
V
SHORTED
°
GS
350
=
10V
13
www.vishay.com
400
100
3