FB180SA10P Vishay Semiconductors, FB180SA10P Datasheet - Page 4

• Manufacturer Part Number: FB180SA10P
• Description: Power MOSFET, 180 A
• Manufacturer: Vishay Semiconductors

FB180SA10P
Vishay Semiconductors
www.vishay.com
4
查询"FB180SA10P"供应商
Fig. 7 - Typical Source Drain Diode Forward Voltage
10000
1000
1000
100
100
0.1
10
10
1
1
0.2
1
Fig. 8 - Maximum Safe Operating Area
T
T
Single Pulse
C
J
T = 150 C
= 25 C
= 150 C
J
OPERATION IN THIS AREA LIMITED
V
V
SD
DS
°
°
0.6
°
,Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
10
[e-mail], [e-mail],
T = 25 C
BY R
J
For technical questions within your region, please contact one of the following:
1.0
DS(on)
°
100
10us
100us
1ms
10ms
1.4
V
GS
= 0 V
V
90%
10%
V
DS
GS
Fig. 10b - Switching Time Waveforms
Power MOSFET, 180 A
1000
1.8
t
d(on)
t
r
t
d(off)
200
175
150
125
100
75
50
25
[e-mail]
0
t
f
25
Fig. 10a - Switching Time Test Circuit
R
Fig. 9 - Maximum Drain Current vs.
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
10 V
50
T , Case Temperature ( C)
V
C
GS
Case Temperature
V
DS
75
D.U.T.
100
R
Document Number: 94541
D
125
°
Revision: 30-Jul-10
+
-
150
V
DD