ATmega329PA Atmel Corporation, ATmega329PA Datasheet - Page 327

• Manufacturer Part Number: ATmega329PA
• Manufacturer: Atmel Corporation

Specifications of ATmega329PA

• Flash (kbytes): 32 Kbytes
• Pin Count: 64
• Max. Operating Frequency: 20 MHz
• Cpu: 8-bit AVR
• # Of Touch Channels: 16
• Hardware Qtouch Acquisition: No
• Max I/o Pins: 54
• Ext Interrupts: 17
• Usb Speed: No
• Usb Interface: No
• Spi: 2
• Twi (i2c): 1
• Uart: 1
• Segment Lcd: 100
• Graphic Lcd: No
• Video Decoder: No
• Camera Interface: No
• Adc Channels: 8
• Adc Resolution (bits): 10
• Adc Speed (ksps): 15
• Analog Comparators: 1
• Resistive Touch Screen: No
• Temp. Sensor: No
• Crypto Engine: No
• Sram (kbytes): 2
• Eeprom (bytes): 1024
• Self Program Memory: YES
• Dram Memory: No
• Nand Interface: No
• Picopower: Yes
• Temp. Range (deg C): -40 to 85
• I/o Supply Class: 1.8 to 5.5
• Operating Voltage (vcc): 1.8 to 5.5
• Fpu: No
• Mpu / Mmu: no / no
• Timers: 3
• Output Compare Channels: 4
• Input Capture Channels: 1
• Pwm Channels: 4
• 32khz Rtc: Yes
• Calibrated Rc Oscillator: Yes

8284D–AVR–6/11
ATmega169A/PA/329A/PA/3290A/PA/649A/P/6490A/P
4. The Flash is programmed one page at a time. The page size is found in
5. A: The EEPROM array is programmed one byte at a time by supplying the address and
6. Any memory location can be verified by using the Read instruction which returns the con-
7. At the end of the programming session, RESET can be set high to commence normal
8. Power-off sequence (if needed):
Table 28-15. Minimum Wait Delay Before Writing the Next Flash or EEPROM Location
Symbol
t
t
t
t
WD_FUSE
WD_FLASH
WD_EEPROM
WD_ERASE
bytes of the instruction must be transmitted. If the 0x53 did not echo back, give RESET a
positive pulse and issue a new Programming Enable command.
page
address and data together with the Load Program Memory Page instruction. To ensure
correct loading of the page, the data low byte must be loaded before data high byte is
applied for a given address. The Program Memory Page is stored by loading the Write
Program Memory Page instruction with the 8MSB of the address. If polling is not used,
the user must wait at least t
Accessing the serial programming interface before the Flash write operation completes
can result in incorrect programming.
data together with the appropriate Write instruction. An EEPROM memory location is first
automatically erased before new data is written. If polling (RDY/BSY) is not used, the
user must wait at least t
chip erased device, no 0xFFs in the data file(s) need to be programmed.
B: The EEPROM array is programmed one page at a time. The Memory page is loaded
one byte at a time by supplying the 2 LSB of the address and data together with the Load
EEPROM Memory Page instruction. The EEPROM Memory Page is stored by loading
the Write EEPROM Memory Page Instruction with the 4MSB of the address. When using
EEPROM page access only byte locations loaded with the Load EEPROM Memory Page
instruction is altered. The remaining locations remain unchanged. If polling (RDY/BSY) is
not used, the used must wait at least t
28-15). In a chip erased device, no 0xFF in the data file(s) need to be programmed.
tent at the selected address at serial output MISO.
operation.
Set RESET to “1”.
Turn V
313. The memory page is loaded one byte at a time by supplying the 6 LSB of the
CC
power off.
WD_EEPROM
WD_FLASH
before issuing the next byte (See
before issuing the next page. (See
WD_EEPROM
before issuing the next page (See
Minimum Wait Delay
4.5ms
4.5ms
3.6ms
9.0ms
Table
Table
Table 28-7 on
28-15.) In a
28-15.)
Table
327