AD8011 Analog Devices, AD8011 Datasheet - Page 4

• Manufacturer Part Number: AD8011
• Description: 300 MHz, 1 mA Current Feedback Amplifier
• Manufacturer: Analog Devices

Specifications of AD8011

• -3db Bandwidth: 400MHz
• Slew Rate: 3.5kV/µs
• Vos: 2mV
• Ib: 5µA
• # Opamps Per Pkg: 1
• Input Noise (nv/rthz): 2nV/rtHz
• Vcc-vee: 3V to 12V
• Isy Per Amplifier: 1.3mA
• Packages: DIP,SOIC

AD8011
ABSOLUTE MAXIMUM RATINGS
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.6 V
Internal Power Dissipation
Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . . ± V
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . ± 2.5 V
Output Short-Circuit Duration
Storage Temperature Range (N, R) . . . . . . . –65°C to +125°C
Operating Temperature Range (A Grade) . . . –40°C to +85°C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . . 300°C
NOTES
1
2
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although the
AD8011 features proprietary ESD protection circuitry, permanent damage may occur on devices
subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended
to avoid performance degradation or loss of functionality.
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
Specification is for device in free air:
8-Lead PDIP Package:
8-Lead SOIC Package:
Figure 3. Maximum Power Dissipation vs. Temperature
Plastic DIP Package (N) . . . . . . . Observe Derating Curves
Small Outline Package (R) . . . . . . Observe Derating Curves
. . . . . . . . . . . . . . . . . . Observe Power Derating Curves
1.5
1.0
0.5
2.0
0
–50 –40 –30 –20 –10
Model
AD8011AN
AD8011AR
AD8011AR-REEL
AD8011AR-REEL7
JA
JA
= 90°C/W
= 155°C/W
AMBIENT TEMPERATURE ( C)
8-LEAD SOIC PACKAGE
2
0
8-LEAD PLASTIC DIP PACKAGE
10 20 30
1
40
50
Temperature
Range
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
60 70 80 90
T
J
= 150 C
ORDERING GUIDE
S
–4–
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the AD8011
is limited by the associated rise in junction temperature. The
maximum safe junction temperature for plastic encapsulated
devices is determined by the glass transition temperature of the
plastic, approximately 150°C. Exceeding this limit temporarily
may cause a shift in parametric performance due to a change in
the stresses exerted on the die by the package. Exceeding a
junction temperature of 175°C for an extended period can result
in device failure.
While the AD8011 is internally short-circuit protected, this may
not be sufficient to guarantee that the maximum junction tem-
perature is not exceeded under all conditions. To ensure proper
operation, it is necessary to observe the maximum power derating
curves (shown in Figure 3).
Package
Description
8-Lead PDIP
8-Lead SOIC
13" Tape and Reel
7" Tape and Reel
V
V
IN
IN
52.3
Figure 4. Test Circuit; Gain = +2
Figure 5. Test Circuit; Gain = –1
1k
1k
50
1k
1k
0.01 F
0.01 F
0.01 F
0.01 F
Package
Option
N-8
R-8
R-8
R-8
10 F
10 F
10 F
10 F
R
1k
R
1k
L
L
V
+V
V
+V
–V
–V
OUT
OUT
S
S
S
S
REV. C