BT151-1000RT NXP Semiconductors, BT151-1000RT Datasheet - Page 2

Planar passivated Silicon Controlled Rectifier (SCR) in a SOT78 plastic package intended for use in applications requiring very high bidirectional blocking voltage capability, high junction temperature capability and high thermal cycling performance

BT151-1000RT

Manufacturer Part Number
BT151-1000RT
Description
Planar passivated Silicon Controlled Rectifier (SCR) in a SOT78 plastic package intended for use in applications requiring very high bidirectional blocking voltage capability, high junction temperature capability and high thermal cycling performance
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
3. Ordering information
Table 2.
4. Limiting values
Table 3.
In accordance with the Absolute Maximum Rating System (IEC 60134).
BT151-1000RT_1
Product data sheet
Type number
BT151-1000RT
Symbol
V
V
I
I
I
I
dI
I
P
P
T
T
T(AV)
T(RMS)
TSM
2
GM
stg
j
DRM
RRM
t
GM
G(AV)
T
/dt
Ordering information
Limiting values
Parameter
repetitive peak off-state voltage
repetitive peak reverse voltage
average on-state current
RMS on-state current
non-repetitive peak on-state
current
I
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
2
t for fusing
Package
Name
SC-46
Description
plastic single-ended package; heatsink mounted; 1 mounting hole;
3-lead TO-220AB
Conditions
half sine wave; T
see
all conduction angles; see
and
half sine wave; T
surge; see
t = 10 ms
I
dI
over any 20 ms period
TM
12 A thyristor high blocking voltage high operating temperature
G
t = 10 ms
t = 8.3 ms
/dt = 50 mA/ s
Rev. 01 — 6 August 2007
= 20 A; I
Figure 1
5
Figure 2
G
= 50 mA;
mb
j
= 25 C prior to
and
134 C;
3
Figure 4
Min
-
-
-
-
-
-
-
-
-
-
-
-
BT151-1000RT
40
Max
1000
1000
7.5
12
120
131
72
50
2
5
0.5
+150
150
© NXP B.V. 2007. All rights reserved.
Version
SOT78
Unit
V
V
A
A
A
A
A
A/ s
A
W
W
C
C
2
s
2 of 12

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