BT151-1000RT NXP Semiconductors, BT151-1000RT Datasheet - Page 7
BT151-1000RT
Manufacturer Part Number
BT151-1000RT
Description
Planar passivated Silicon Controlled Rectifier (SCR) in a SOT78 plastic package intended for use in applications requiring very high bidirectional blocking voltage capability, high junction temperature capability and high thermal cycling performance
Manufacturer
NXP Semiconductors
Datasheet
1.BT151-1000RT.pdf
(12 pages)
NXP Semiconductors
BT151-1000RT_1
Product data sheet
Fig 7. Normalized gate trigger voltage as a function of
Fig 9. On-state current as a function of on-state
V
GT(25 C)
V
(1) T
(2) T
(3) T
(A)
GT
I
T
1.6
1.2
0.8
0.4
30
20
10
0
junction temperature
V
R
voltage
50
0
j
j
j
o
s
= 150 C; typical values
= 150 C; maximum values
= 25 C; maximum values
= 1.06 V
= 0.0304
0.5
0
50
1
(1)
(2)
100
1.5
(3)
003aab823
T
001aaa959
V
j
T
( C)
(V)
12 A thyristor high blocking voltage high operating temperature
150
Rev. 01 — 6 August 2007
2
Fig 8. Normalized gate trigger current as a function of
Fig 10. Normalized latching current as a function of
I
GT(25 C)
I
L(25 C)
I
GT
I
L
3
2
1
0
3
2
1
0
junction temperature
junction temperature
50
50
0
0
BT151-1000RT
50
50
100
100
© NXP B.V. 2007. All rights reserved.
003aab824
T
003aab825
T
j
j
( C)
( C)
150
150
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