BT151-1000RT NXP Semiconductors, BT151-1000RT Datasheet - Page 8
![Planar passivated Silicon Controlled Rectifier (SCR) in a SOT78 plastic package intended for use in applications requiring very high bidirectional blocking voltage capability, high junction temperature capability and high thermal cycling performance](/photos/41/50/415038/sot078_3d_sml.gif)
BT151-1000RT
Manufacturer Part Number
BT151-1000RT
Description
Planar passivated Silicon Controlled Rectifier (SCR) in a SOT78 plastic package intended for use in applications requiring very high bidirectional blocking voltage capability, high junction temperature capability and high thermal cycling performance
Manufacturer
NXP Semiconductors
Datasheet
1.BT151-1000RT.pdf
(12 pages)
NXP Semiconductors
BT151-1000RT_1
Product data sheet
Fig 11. Normalized holding current as a function of
I
H(25 C)
I
H
3
2
1
0
junction temperature
50
0
50
100
003aab826
T
j
( C)
12 A thyristor high blocking voltage high operating temperature
150
Rev. 01 — 6 August 2007
Fig 12. Critical rate of rise of off-state voltage as a
dV
(V/ s)
D
10
10
10
/dt
10
4
3
2
Gate open circuit
function of junction temperature; typical values
0
50
BT151-1000RT
100
© NXP B.V. 2007. All rights reserved.
T
j
003aab827
( C)
150
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